scholarly journals High Performance GaN High Electron Mobility Transistors on Low Resistivity Silicon for $X$ -Band Applications

2015 ◽  
Vol 36 (9) ◽  
pp. 899-901 ◽  
Author(s):  
A. Eblabla ◽  
X. Li ◽  
I. Thayne ◽  
D. J. Wallis ◽  
I. Guiney ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Low Resistivity ◽  
Electron Mobility Transistors

High Performance CuMetallized GaAs HEMTs Processing and Reliability

1998 ◽  
Vol 535 ◽  
Author(s):  
T. Feng ◽  
A. Dimoulas ◽  
N. Strifas ◽  
A. Christou
Keyword(s):  
Elevated Temperature ◽  
Electron Mobility ◽  
High Performance ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Comparable Performance ◽  
Gate Resistance

AbstractAlGaAs/GaAs based high electron mobility transistors (HEMTs) with Cu/Ti metallized gates have been fabricated. Copper gates were used to achieve low gate resistance and to minimize the hydrogen induced device degradation. The DC measurement of the processed AlGaAs/GaAs HEMTs with Cu/Ti gates shows comparable performance to similar Au based GaAs HEMTs. The Cu-based HEMTs were also subjected to elevated temperature testing under 5% H2 –N2 forming gas up to 250°C and 8 hours and no degradation due to hydrogen effects was found.

scholarly journals High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 509
Author(s):  
Yu-Chun Huang ◽  
Hsien-Chin Chiu ◽  
Hsuan-Ling Kao ◽  
Hsiang-Chun Wang ◽  
Chia-Hao Liu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Heat Removal ◽  
High Electron Mobility Transistors ◽  
Thermal Dissipation ◽  
High Electron ◽  
Electrical Characteristics ◽  
High Electron Mobility ◽  
Low Resistivity ◽  
Electron Mobility Transistors ◽  
Gan Hemts

Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on a low-resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on the SiC substrate possess several advantages, including electrical characteristics and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of the low-resistivity SiC substrate is three times lower than the ordinary SiC substrate.

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