High-Performance Polycrystalline Silicon Thin-Film Transistors Based on Metal-Induced Crystallization in an Oxidizing Atmosphere

Rongsheng Chen; Wei Zhou; Meng Zhang; Man Wong; Hoi-Sing Kwok

doi:10.1109/led.2015.2409858

High-Performance Polycrystalline Silicon Thin-Film Transistors Based on Metal-Induced Crystallization in an Oxidizing Atmosphere

IEEE Electron Device Letters ◽

10.1109/led.2015.2409858 ◽

2015 ◽

Vol 36 (5) ◽

pp. 460-462 ◽

Cited By ~ 10

Author(s):

Rongsheng Chen ◽

Wei Zhou ◽

Meng Zhang ◽

Man Wong ◽

Hoi-Sing Kwok

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Silicon Thin Film ◽

Metal Induced Crystallization ◽

Oxidizing Atmosphere ◽

Induced Crystallization

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A High Performance Polycrystalline Silicon Thin Film Transistor Using A Metal Induced Crystallization With A Ni Solution

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) ◽

10.1109/imnc.1998.730107 ◽

1998 ◽

Keyword(s):

Thin Film ◽

Polycrystalline Silicon ◽

High Performance ◽

Thin Film Transistor ◽

Silicon Thin Film ◽

Metal Induced Crystallization ◽

Induced Crystallization

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A High-Performance Polycrystalline Silicon Thin-Film Transistor Using Metal-Induced Crystallization with Ni Solution

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.7193 ◽

1998 ◽

Vol 37 (Part 1, No. 12B) ◽

pp. 7193-7197 ◽

Cited By ~ 26

Author(s):

Soo Young Yoon ◽

Sung Ki Kim ◽

Jae Young Oh ◽

YoungJin Choi ◽

Woo Sung Shon ◽

...

Keyword(s):

Thin Film ◽

Polycrystalline Silicon ◽

High Performance ◽

Thin Film Transistor ◽

Silicon Thin Film ◽

Metal Induced Crystallization ◽

Induced Crystallization

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Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors

Thin Solid Films ◽

10.1016/j.tsf.2005.01.045 ◽

2005 ◽

Vol 487 (1-2) ◽

pp. 102-106 ◽

Cited By ~ 13

Author(s):

L. Pereira ◽

P. Barquinha ◽

E. Fortunato ◽

R. Martins

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film ◽

Metal Induced Crystallization ◽

Induced Crystallization

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Reduction of Leakage Currents in Bottom-Gate N-Channel Metal-Induced Crystallization through a Cap Layer Polycrystalline Silicon Thin-Film Transistors by Applying Off-Bias Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.08hk01 ◽

2009 ◽

Vol 48 (8) ◽

pp. 08HK01 ◽

Cited By ~ 1

Author(s):

Dong Han Kang ◽

Beom Seok Oh ◽

Mi Kyung Park ◽

Jae Hwan Oh ◽

Young Jin Chang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Silicon Thin Film ◽

Leakage Currents ◽

Metal Induced Crystallization ◽

Bias Stress ◽

Cap Layer ◽

Induced Crystallization ◽

Bottom Gate

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High-performance polycrystalline silicon thin-film transistors prepared via the laser crystallization of the prepatterned channel layer on the bottom-gate structure

Thin Solid Films ◽

10.1016/j.tsf.2012.09.048 ◽

2013 ◽

Vol 529 ◽

pp. 421-425 ◽

Cited By ~ 4

Author(s):

Chao-Lung Wang ◽

I-Che Lee ◽

Chun-Yu Wu ◽

Yu-Ting Cheng ◽

Po-Yu Yang ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Laser Crystallization ◽

Silicon Thin Film ◽

Channel Layer ◽

Gate Structure ◽

Bottom Gate

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High-performance vertically stacked bottom-gate and top-gate polycrystalline silicon thin-film transistors for three-dimensional integrated circuits

Solid-State Electronics ◽

10.1016/j.sse.2012.05.016 ◽

2012 ◽

Vol 77 ◽

pp. 26-30 ◽

Cited By ~ 3

Author(s):

I-Che Lee ◽

Tsung-Che Tsai ◽

Chun-Chien Tsai ◽

Po-Yu Yang ◽

Chao-Lung Wang ◽

...

Keyword(s):

Thin Film ◽

Integrated Circuits ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Three Dimensional ◽

Silicon Thin Film ◽

Bottom Gate

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SiO2formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors

Applied Physics Letters ◽

10.1063/1.110956 ◽

1994 ◽

Vol 64 (8) ◽

pp. 1018-1020 ◽

Cited By ~ 32

Author(s):

T. Sameshima ◽

A. Kohno ◽

M. Sekiya ◽

M. Hara ◽

N. Sano

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Thermal Evaporation ◽

Oxygen Atmosphere ◽

Silicon Thin Film

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Development of high-performance polycrystalline silicon thin-film transistors (TFTs) using defect control process technologies

IEEE Electron Device Letters ◽

10.1109/led.2002.1015218 ◽

2002 ◽

Vol 23 (7) ◽

pp. 407-409 ◽

Cited By ~ 6

Author(s):

S. Higashi ◽

D. Abe ◽

Y. Hiroshima ◽

K. Miyashita ◽

T. Kawamura ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Control Process ◽

Silicon Thin Film ◽

Defect Control

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High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.l311 ◽

2002 ◽

Vol 41 (Part 2, No. 3B) ◽

pp. L311-L313 ◽

Cited By ~ 86

Author(s):

Akito Hara ◽

Fumiyo Takeuchi ◽

Michiko Takei ◽

Katsuyuki Suga ◽

Kenichi Yoshino ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Continuous Wave ◽

Continuous Wave Laser ◽

Silicon Thin Film ◽

Alkali Glass ◽

Wave Laser ◽

Lateral Crystallization

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High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.066502 ◽

2012 ◽

Vol 51 ◽

pp. 066502

Author(s):

Chao-Lung Wang ◽

Huang-Chung Cheng ◽

I-Che Lee ◽

Chun-Yu Wu ◽

Yu-Ting Cheng ◽

...

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

High Performance ◽

Silicon Thin Film ◽

Recessed Channel

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