Hydrogenated Nanocrystalline Silicon Near Infrared Photodiode Detector

2014 ◽  
Vol 35 (11) ◽  
pp. 1106-1108 ◽  
Author(s):  
Alireza Khosropour ◽  
Andrei Sazonov
Keyword(s):  
Near Infrared ◽  
Nanocrystalline Silicon ◽  
Infrared Photodiode

Thin-film Photodiode with an a-Si:H/nc-Si:H Absorption Bilayer

2011 ◽  
Vol 1321 ◽  
Author(s):  
Y. Vygranenko ◽  
M. Vieira ◽  
A. Sazonov
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Near Infrared ◽  
Spectral Response ◽  
Nanocrystalline Silicon ◽  
Depletion Region ◽  
Long Wavelength ◽  
Near Ultraviolet ◽  
High Bias ◽  
Bias Range

ABSTRACTWe report on the fabrication and characterization of n+-n-i-δi-p thin-film photodiodes with an active region comprising a hydrogenated nanocrystalline silicon (nc-Si:H) n-layer and a hydrogenated amorphous silicon (a-Si:H) i-layer. The combination of wide- and narrow-gap absorption layers enables the spectral response extending from the near-ultraviolet (NUV) to the near-infrared (NIR) region. Moreover, in the low-bias range, when only the i-layer is depleted, the leakage current is significantly lower than that in the conventional nc-Si:H n+-n-p+ photodiode deposited under the same deposition conditions. Device with the 900nm/400nm thick n-i-layers exhibits a reverse dark current density of 3 nA/cm2 at −1V. In the high-bias range, when the depletion region expands within the n-layer, the magnitude of the leakage current depends on electronic properties of nc-Si:H. The density of shallow and deep states, and diffusion length of holes in the n-layer have been estimated from the capacitance-voltage characteristics and from the bias dependence of the long-wavelength response, respectively. To improve the quantum efficiency in the NIR-region, we have also implemented a Cr / ZnO:Al back reflector. The observed long-wavelength spectral response is about twice as high as that for a reference photodiode without ZnO:Al layer. Results demonstrate the feasibility of the photodiode for low-level light detection in the NUV-to-NIR spectral range.

Photoelectric properties of p-β-FeSi2/n-4H-SiC heterojunction near-infrared photodiode

2015 ◽  
Vol 36 (5) ◽  
pp. 054009
Author(s):  
Chunlei Zheng ◽  
Hongbin Pu ◽  
Hong Li ◽  
Zhiming Chen
Keyword(s):  
Near Infrared ◽  
Photoelectric Properties ◽  
Infrared Photodiode

Femtosecond Carrier Dynamics in Nanocrystalline Silicon Films: The Effect of the Degree of Crystallinity

2001 ◽  
Vol 664 ◽  
Author(s):  
K.E. Myers ◽  
Q. Wang ◽  
S.L. Dexheimer
Keyword(s):  
Near Infrared ◽  
Heterogeneous Material ◽  
Nanocrystalline Silicon ◽  
Carrier Dynamics ◽  
Degree Of Crystallinity ◽  
Time Resolved ◽  
Carrier Relaxation ◽  
Pump Probe ◽  
Silicon Thin Films ◽  
The Degree Of Crystallinity

ABSTRACTWe present studies of the ultrafast dynamics of photoexcited carriers in HWCVD nanocrystalline silicon thin films to address the underlying physics of carrier relaxation and recombination processes in this heterogeneous material. The degree of crystallinity is controlled by varying the H-dilution during deposition, yielding materials with increasingly larger grain size and crystalline fraction at higher dilution values. Time-resolved measurements of the carrier dynamics were made using a femtosecond pump-probe method, in which a short pump pulse excites carriers in the sample and a time-delayed probe pulse measures the resulting change in the optical properties as a function of the pump-probe delay time. Photoexcitation of carriers with pulses 35 fs in duration centered at 1.55 eV results in a net induced absorbance signal in the near-infrared that is analyzed in terms of a multi-component response that includes contributions from the silicon crystallites and the amorphous matrix.

Silicon nanomembrane-based near infrared phototransistor with positive and negative photodetections

Nanoscale ◽  
2019 ◽  
Vol 11 (36) ◽  
pp. 16844-16851 ◽  
Author(s):  
Ruobing Pan ◽  
Qinglei Guo ◽  
Jun Cao ◽  
Gaoshan Huang ◽  
Yang Wang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Silicon Nanomembrane ◽  
Infrared Photodiode ◽  
Silicon Nanomembranes

Near infrared photodiode and phototransistor were fabricated on silicon nanomembranes with nanostructures, and both positive and negative photodetections were realized.

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