Response to “Comment on ‘Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction at low temperature’ ” [Appl. Phys. Lett. 94, 166102 (2009)]

2009 ◽  
Vol 94 (16) ◽  
pp. 166103 ◽  
Author(s):  
Hai Zhou ◽  
Guojia Fang ◽  
Longyan Yuan ◽  
Chong Wang ◽  
Xiaoxia Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Near Infrared ◽  
Silicon Nanowire ◽  
Infrared Photodiode ◽  
Deep Ultraviolet

Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature

2009 ◽  
Vol 94 (1) ◽  
pp. 013503 ◽  
Author(s):  
Hai Zhou ◽  
Guojia Fang ◽  
Longyan Yuan ◽  
Chong Wang ◽  
Xiaoxia Yang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Near Infrared ◽  
Silicon Nanowire ◽  
Infrared Photodiode ◽  
Deep Ultraviolet

Low-Temperature Growth of Ferroelectric Hf0.5Zr0.5O2 Thin Films Assisted by Deep Ultraviolet Light Irradiation

2021 ◽  
Vol 3 (3) ◽  
pp. 1244-1251
Author(s):  
Hyunjin Joh ◽  
Gopinathan Anoop ◽  
Won-June Lee ◽  
Dipjyoti Das ◽  
Jun Young Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Ultraviolet Light ◽  
Light Irradiation ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Ultraviolet Light Irradiation ◽  
Deep Ultraviolet

High-performance broadband heterojunction photodetectors based on multilayered PtSe2 directly grown on a Si substrate

Nanoscale ◽  
2018 ◽  
Vol 10 (32) ◽  
pp. 15285-15293 ◽  
Author(s):  
Chao Xie ◽  
Longhui Zeng ◽  
Zhixiang Zhang ◽  
Yuen-Hong Tsang ◽  
Linbao Luo ◽  
...  
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Si Substrate ◽  
Deep Ultraviolet

The broadband heterojunction photodetectors, exhibiting superior photoresponse performances ranged from deep ultraviolet to near-infrared, were made by growing a multilayered PtSe2 film directly onto Si.

High‐Accuracy and Broadband Wavelength Sensor with Detection Region Ranging from Deep Ultraviolet to Near Infrared Light

2021 ◽  
pp. 2101735
Author(s):  
Chun‐Yan Li ◽  
Yu‐Tian Xiao ◽  
Can Fu ◽  
Feng‐Xia Liang ◽  
Li‐Miao Chen ◽  
...  
Keyword(s):  
Near Infrared ◽  
High Accuracy ◽  
Infrared Light ◽  
Near Infrared Light ◽  
Deep Ultraviolet

scholarly journals Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4046
Author(s):  
Guo-Dong Hao ◽  
Manabu Taniguchi ◽  
Shin-ichiro Inoue
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Hexagonal Boron Nitride ◽  
Annealing Treatment ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Light Transmittance ◽  
Radio Frequency Sputtering ◽  
Deep Ultraviolet ◽  
Deposition Processes

Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

Low-temperature operation of AlGaN single-quantum-well light-emitting diodes with deep ultraviolet emission at 285 nm

2002 ◽  
Vol 81 (16) ◽  
pp. 2938-2940 ◽  
Author(s):  
A. Chitnis ◽  
R. Pachipulusu ◽  
V. Mandavilli ◽  
M. Shatalov ◽  
E. Kuokstis ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Single Quantum ◽  
Ultraviolet Emission ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Deep Ultraviolet Emission

scholarly journals Highly Efficient Silicon Nanowire Surface Passivation by Bismuth Nano-Coating for Multifunctional Bi@SiNWs Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 1434
Author(s):  
Mariem Naffeti ◽  
Pablo Aitor Postigo ◽  
Radhouane Chtourou ◽  
Mohamed Ali Zaïbi
Keyword(s):  
Silicon Nanowires ◽  
Near Infrared ◽  
Surface Passivation ◽  
Silicon Nanowire ◽  
Etching Technique ◽  
Highly Efficient ◽  
Broadband Emission ◽  
New Family ◽  
Nano Coating ◽  
Nanowire Surface

A key requirement for the development of highly efficient silicon nanowires (SiNWs) for use in various kinds of cutting-edge applications is the outstanding passivation of their surfaces. In this vein, we report on a superior passivation of a SiNWs surface by bismuth nano-coating (BiNC) for the first time. A metal-assisted chemical etching technique was used to produce the SiNW arrays, while the BiNCs were anchored on the NWs through thermal evaporation. The systematic studies by Scanning Electron Microscopy (SEM), energy dispersive X-ray spectra (EDX), and Fourier Transform Infra-Red (FTIR) spectroscopies highlight the successful decoration of SiNWs by BiNC. The photoluminescence (PL) emission properties of the samples were studied in the visible and near-infrared (NIR) spectral range. Interestingly, nine-fold visible PL enhancement and NIR broadband emission were recorded for the Bi-modified SiNWs. To our best knowledge, this is the first observation of NIR luminescence from Bi-coated SiNWs (Bi@SiNWs), and thus sheds light on a new family of Bi-doped materials operating in the NIR and covering the important telecommunication wavelengths. Excellent anti-reflectance abilities of ~10% and 8% are observed for pure SiNWs and Bi@SiNWs, respectively, as compared to the Si wafer (50–90%). A large decrease in the recombination activities is also obtained from Bi@SiNWs heterostructures. The reasons behind the superior improvement of the Bi@SiNWs performance are discussed in detail. The findings demonstrate the effectiveness of Bi as a novel surface passivation coating, where Bi@SiNWs heterostructures are very promising and multifunctional for photovoltaics, optoelectronics, and telecommunications.

scholarly journals Reproduction of the Interstellar Ice Band by Grain Mantle Analogs

1980 ◽  
Vol 87 ◽  
pp. 387-388
Author(s):  
W. Hagen ◽  
A.G.G.M. Tielens ◽  
J. M. Greenberg
Keyword(s):  
Low Temperature ◽  
Interstellar Dust ◽  
Near Infrared ◽  
Absorption Feature ◽  
Band Shape ◽  
Interstellar Ice ◽  
Infrared Spectrometer ◽  
Simple Molecules ◽  
Many Sources ◽  
Dust Grain

The near-infrared spectrum of many sources associated with molecular clouds shows a broad absorption feature at 3.08 μm (e.g. Merrill et al., 1976; Harris et al., 1978). This feature has usually been attributed to absorption by H2O ice frozen on grains, but it has been impossible to satisfactorily reproduce the observed band shape (Merrill et al., 1976; Mukai et al., 1978). We have been able to obtain a complete fit of this absorption feature in the laboratory using very low temperature mixtures of H2O with other polar molecules. The preparation of these interstellar dust grain-mantle analogs has been described elsewhere (Greenberg, 1979; Hagen et al., 1979). They are prepared by allowing a gas mixture of simple molecules (e.g. CO, H2O, NH3, CH4 etc.) to condense on a low temperature (10 K) substrate. This frozen mixture can be heated and recooled. The samples are analyzed with an infrared spectrometer.

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