High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-${\rm SiN}_{x}$/RF-Sputtered-${\rm HfO}_{2}$

2014 ◽  
Vol 35 (2) ◽  
pp. 175-177 ◽  
Author(s):  
Woojin Choi ◽  
Ogyun Seok ◽  
Hojin Ryu ◽  
Ho-Young Cha ◽  
Kwang-Seok Seo
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Gate Insulator ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Dual Gate

Electrical Characteristics of New LDD Poly-Si TFT with MIS-Alignment Tolerant Structure for AMLCDs

1997 ◽  
Vol 471 ◽  
Author(s):  
Byung-Hyuk Min ◽  
Jerzy Kanicki
Keyword(s):  
Leakage Current ◽  
Experimental Results ◽  
Electrical Characteristics ◽  
Current Ratio ◽  
Low Leakage ◽  
Kink Effect ◽  
Low Leakage Current ◽  
Dual Gate ◽  
Output Characteristics

ABSTRACTA new LDD poly-Si TFT structure having symmetrical electrical characteristics independent of the process induced mis-alignment is described in this paper. Based on the experimental results, we have established there is no difference between the forward and reverse characteristics and a low leakage current, comparable to a conventional LDD poly-Si TFT, has been maintained for this new poly-Si TFTs. The maximum ON/OFF current ratio of about 1×108 is obtained for the LDD length of 1.0 μm. In addition, the kink effect in the output characteristics is remarkably improved in the new TFTs in comparison to the conventional non-LDD single- or dual-gate TFTs.

Conductivity Modulated and Implantation-Free 4H-SiC Ultra-High-Voltage PiN Diodes

2018 ◽  
Vol 924 ◽  
pp. 568-572 ◽  
Author(s):  
Arash Salemi ◽  
Hossein Elahipanah ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Voltage Drop ◽  
Device Simulation ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Forward Voltage Drop ◽  
Ultra High Voltage

Implantation-free mesa etched ultra-high-voltage 4H-SiC PiN diodes are fabricated, measured and analyzed by device simulation. The diode’s design allows a high breakdown voltage of about 19.3 kV according to simulations. No reverse breakdown is observed up to 13 kV with a very low leakage current of 0.1 μA. A forward voltage drop (VF) and differential on-resistance (Diff. Ron) of 9.1 V and 41.4 mΩ cm2are measured at 100 A/cm2, respectively, indicating the effect of conductivity modulation.

High voltage gradient and low leakage current SnO2 varistor ceramics doped with Y2O3 and Nb2O5

2020 ◽  
Vol 242 ◽  
pp. 122526 ◽  
Author(s):  
Dongji Liu ◽  
Weiqing Wang ◽  
Kuan Cheng ◽  
Qingyun Xie ◽  
Yuanxiang Zhou ◽  
...  
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Voltage Gradient ◽  
Low Leakage ◽  
Low Leakage Current

New High-Voltage Unipolar Mode p+ Si/n– 4H-SiC Heterojunction Diode

2005 ◽  
Vol 483-485 ◽  
pp. 953-956 ◽  
Author(s):  
Tetsuya Hayashi ◽  
Hideaki Tanaka ◽  
Yoshio Shimoida ◽  
Satoshi Tanimoto ◽  
Masakatsu Hoshi
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Drift Region ◽  
Heterojunction Diode ◽  
Inductive Load ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Blocking Voltage ◽  
Switching Characteristics ◽  
P Type

We demonstrate a new high-voltage p+ Si/n- 4H-SiC heterojunction diode (HJD) by numerical simulation and experimental results. This HJD is expected to display good reverse recovery because of unipolar action similar to that of a SiC Schottky barrier diode (SBD) when forward biased. The blocking voltage of the HJD is almost equal to the ideal level in the drift region of n- 4H-SiC. In addition, the HJD has the potential for a lower reverse leakage current compared with the SBD. A HJD was fabricated with p+-type polycrystalline silicon on an n--type epitaxial layer of 4H-SiC. Measured reverse blocking voltage was 1600 V with low leakage current. Switching characteristics of the fabricated HJD showed nearly zero reverse recovery with an inductive load circuit.

Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors

2006 ◽  
Vol 89 (20) ◽  
pp. 202908 ◽  
Author(s):  
Mi-Hwa Lim ◽  
KyongTae Kang ◽  
Ho-Gi Kim ◽  
Il-Doo Kim ◽  
YongWoo Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

scholarly journals A Transformer-Less Buck-Boost Grid-Tied Inverter with Low Leakage-Current and High Voltage-Gain

2021 ◽  
Vol 11 (8) ◽  
pp. 3625
Author(s):  
Chien-Hsuan Chang ◽  
Yi-Fan Chen
Keyword(s):  
Leakage Current ◽  
High Voltage ◽  
Input Voltage ◽  
Boost Converter ◽  
Oxide Semiconductor ◽  
Voltage Gain ◽  
Low Leakage ◽  
High Voltage Gain ◽  
Low Leakage Current ◽  
Circuit Structure

To improve the efficiency of photovoltaic (PV) grid-tied systems and simplify the circuit structure, many pseudo DC-link inverters have been proposed by combining a sinusoidal pulse-width modulation (SPWM) controlled buck-boost converter and a low-frequency polarity unfolder. However, due to the non-ideal characteristics of power diodes, the voltage-gain of a buck-boost converter is limited. To meet the needs of grid-connected systems with low input voltage and 220 Vrms utility, this paper uses two two-switch buck-boost converters with coupled inductors to develop a transformer-less buck-boost grid-tied inverter with low leakage-current and high voltage-gain. The proposed inverter is charging on the primary side of the coupled inductor and discharging in series on the primary side and the secondary side so that the voltage-gain can be greatly increased. Furthermore, the utility line can be connected to the negative end of the PV array to suppress leakage current, and the unfolding circuit can be simplified to reduce the conduction losses. High-frequency switching is only performed in one metal-oxide-semiconductor field-effect transistor (MOSFET) in each mode, which can effectively improve conversion efficiency. A prototype was implemented to obtain experimental results and to prove the validity of the proposed circuit structure.

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