Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs

2013 ◽  
Vol 34 (1) ◽  
pp. 117-119 ◽  
Author(s):  
Cher Xuan Zhang ◽  
En Xia Zhang ◽  
Daniel M. Fleetwood ◽  
Ronald D. Schrimpf ◽  
Sarit Dhar ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise

Modeling the interface traps-related low frequency noise in triple-gate SOI junctionless nanowire transistors

2019 ◽  
Vol 215 ◽  
pp. 111005 ◽  
Author(s):  
Renan Trevisoli ◽  
Rodrigo Trevisoli Doria ◽  
Sylvain Barraud ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Nanowire Transistors

Low Frequency Noise in 4H-SiC Lateral JFET Structures

2012 ◽  
Vol 717-720 ◽  
pp. 473-476 ◽  
Author(s):  
Hua Khee Chan ◽  
Rupert C. Stevens ◽  
Jonathan P. Goss ◽  
Nicholas G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Cross Section ◽  
Low Frequency ◽  
Frequency Noise ◽  
Small Signal ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Low Level ◽  
Power Spectral ◽  
Bulk Substrate ◽  
High Temperature Operation

Low frequency noise on 4H-SiC low-level signal-lateral JFETs was systematically investigated. In contrast to previous studies, which are based upon high power vertical structures, this work investigates the low-frequency noise behaviour of low-level signal-lateral devices which are more relevant to the realisation of small signal amplifiers.The JFETs studied share an identical cross section, with different gate lengths and widths. For high temperature operation between 300K and 700K at VGS = 0V, the Normalised Power Spectral Density (NPSD) of the JFETs is proportional to ƒ-1. The NPSD increases monotonically with temperature until a critical temperature, where it starts to decline. Two unique noise origins, fluctuation from bulk and SiO2-SiC interface traps were observed across all the devices investigated. Low frequency noise for devices with a 50μm gate width is localised at the SiO2-SiC interface, whereas for wider devices the noise is seen to be of bulk/substrate origin, which follows Hooge’s model.

scholarly journals Empirical and Theoretical Modeling of Low-Frequency Noise Behavior of Ultrathin Silicon-on-Insulator MOSFETs Aiming at Low-Voltage and Low-Energy Regime

Micromachines ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 5 ◽  
Author(s):  
Yasuhisa Omura
Keyword(s):  
Low Voltage ◽  
Low Frequency ◽  
Silicon On Insulator ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Soi Mosfet ◽  
Buried Channel ◽  
Inversion Channel ◽  
Bias Range

This paper theoretically revisits the low-frequency noise behavior of the inversion-channel silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) and the buried-channel SOI MOSFET because the quality of both Si/SiO2 interfaces (top and bottom) should modulate the low-frequency fluctuation characteristics of both devices. It also addresses the low-frequency noise behavior of sub-100-nm channel SOI MOSFETs. We deepen the discussion of the low-frequency noise behavior in the subthreshold bias range in order to elucidate the device’s potential for future low-voltage and low-power applications. As expected, analyses suggest that the weak inversion channel near the top surface of the SOI MOSFET is strongly influenced by interface traps near the top surface of the SOI layer because the traps are not well shielded by low-density surface inversion carriers in the subthreshold bias range. Unexpectedly, we find that the buried channel is primarily influenced by interface traps near the top surface of the SOI layer, not by traps near the bottom surface of the SOI layer. This is not due to the simplified capacitance coupling effect. These interesting characteristics of current fluctuation spectral intensity are explained well by the theoretical models proposed here.

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 428-431 ◽  
Author(s):  
Lucy Claire Martin ◽  
Hua Khee Chan ◽  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

Estimating the Quality of Thermionic Cathodes for Microwave Vacuum Tubes Using the Low-Frequency Noise Parameters

Vestnik MEI ◽  
2018 ◽  
Vol 5 (5) ◽  
pp. 120-127
Author(s):  
Mikhail D. Vorobyev ◽  
◽  
Dmitriy N. Yudaev ◽  
Andrey Yu. Zorin ◽  
◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Parameters ◽  
Thermionic Cathodes ◽  
Vacuum Tubes

Simulation of Low Frequency Noise in a CCTWT

1999 ◽  
Author(s):  
Charles K. Birdsall ◽  
J. P. Varboncoeur ◽  
P. J. Christensen
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise
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