A Contact-Resistive Random-Access-Memory-Based True Random Number Generator

2012 ◽  
Vol 33 (8) ◽  
pp. 1108-1110 ◽  
Author(s):  
Chien-Yuan Huang ◽  
Wen Chao Shen ◽  
Yuan-Heng Tseng ◽  
Ya-Chin King ◽  
Chrong-Jung Lin
Keyword(s):  
Random Number ◽  
Random Number Generator ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Number Generator ◽  
Access Memory ◽  
True Random Number Generator

scholarly journals High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code

2011 ◽  
Vol 50 (4) ◽  
pp. 04DM01 ◽  
Author(s):  
Tetsufumi Tanamoto ◽  
Naoharu Shimomura ◽  
Sumio Ikegawa ◽  
Mari Matsumoto ◽  
Shinobu Fujita ◽  
...  
Keyword(s):  
High Speed ◽  
Random Number ◽  
Error Correcting Code ◽  
Random Number Generator ◽  
Random Access ◽  
Random Access Memory ◽  
Number Generator ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory

scholarly journals High-Speed Magnetoresistive Random-Access Memory Random Number Generator Using Error-Correcting Code

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DM01 ◽  
Author(s):  
Tetsufumi Tanamoto ◽  
Naoharu Shimomura ◽  
Sumio Ikegawa ◽  
Mari Matsumoto ◽  
Shinobu Fujita ◽  
...  
Keyword(s):  
High Speed ◽  
Random Number ◽  
Error Correcting Code ◽  
Random Number Generator ◽  
Random Access ◽  
Random Access Memory ◽  
Number Generator ◽  
Access Memory ◽  
Magnetoresistive Random Access Memory

scholarly journals RRAM Random Number Generator Based on Train of Pulses

Electronics ◽  
2021 ◽  
Vol 10 (15) ◽  
pp. 1831
Author(s):  
Binbin Yang ◽  
Daniel Arumí ◽  
Salvador Manich ◽  
Álvaro Gómez-Pau ◽  
Rosa Rodríguez-Montañés ◽  
...  
Keyword(s):  
Random Number ◽  
Random Number Generator ◽  
Random Access ◽  
Pulse Amplitude ◽  
Resistive Random Access Memory ◽  
Random Numbers ◽  
Number Generator ◽  
Security Applications ◽  
Device Resistance ◽  
New Strategy

In this paper, the modulation of the conductance levels of resistive random access memory (RRAM) devices is used for the generation of random numbers by applying a train of RESET pulses. The influence of the pulse amplitude and width on the device resistance is also analyzed. For each pulse characteristic, the number of pulses required to drive the device to a particular resistance threshold is variable, and it is exploited to extract random numbers. Based on this behavior, a random number generator (RNG) circuit is proposed. To assess the performance of the circuit, the National Institute of Standards and Technology (NIST) randomness tests are applied to evaluate the randomness of the bitstreams obtained. The experimental results show that four random bits are simultaneously obtained, passing all the applied tests without the need for post-processing. The presented method provides a new strategy to generate random numbers based on RRAMs for hardware security applications.

scholarly journals Improved Performance of SRAM-Based True Random Number Generator by Leveraging Irradiation Exposure

Sensors ◽  
2020 ◽  
Vol 20 (21) ◽  
pp. 6132
Author(s):  
Xu Zhang ◽  
Chunsheng Jiang ◽  
Gang Dai ◽  
Le Zhong ◽  
Wen Fang ◽  
...  
Keyword(s):  
High Speed ◽  
Random Number ◽  
Random Number Generator ◽  
Random Access ◽  
Memory Capacity ◽  
Number Generator ◽  
Clock Frequency ◽  
True Random Number Generator ◽  
Secure Data Transmission ◽  
Improved Performance

Encryption is an important step for secure data transmission, and a true random number generator (TRNG) is a key building block in many encryption algorithms. Static random-access memory (SRAM) chips can be easily available sources of true random numbers, benefiting from noisy SRAM cells whose start-up values flip between different power-on cycles. Embarking from this phenomenon, a novel performance (i.e., randomness and throughput) improvement method of SRAM-based TRNG is proposed, and its implementation can be divided into two phases: irradiation exposure and hardware postprocessing. As the randomness of original SRAM power-on values is fairly low, ionization irradiation is utilized to enhance its randomness, and the min-entropy can increase from about 0.03 to above 0.7 in the total ionizing irradiation (TID) experiments. Additionally, while the data remanence effect hampers obtaining random bitstreams with high speed, the ionization irradiation can also weaken this impact and improve the throughput of TRNG. In the hardware postprocessing stage, Secure Hash Algorithm 256 (SHA-256) is implemented on a Field Programmable Gate Array (FPGA) with clock frequency of 200 MHz. It can generate National Institute of Standards and Technology (NIST) SP 800-22 compatible true random bitstreams with throughput of 178 Mbps utilizing SRAM chip with 1 Mbit memory capacity. Furthermore, according to different application scenarios, the throughput can be widely scalable by adjusting clock frequency and SRAM memory capacity, which makes the novel TRNG design applicable for various Internet of Things (IOT) devices.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

0.4 mW, 0.27 pJ/bit true random number generator using jitter, metastability and current starved topology

2020 ◽  
Vol 14 (7) ◽  
pp. 1001-1011
Author(s):  
Dhirendra Kumar ◽  
Rahul Anand ◽  
Sajai Vir Singh ◽  
Prasanna Kumar Misra ◽  
Ashok Srivastava ◽  
...  
Keyword(s):  
Random Number ◽  
Random Number Generator ◽  
Number Generator ◽  
True Random Number Generator

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals A High‐Speed True Random Number Generator Based on a Cu x Te 1− x Diffusive Memristor

2021 ◽  
pp. 2100062
Author(s):  
Kyung Seok Woo ◽  
Jaehyun Kim ◽  
Janguk Han ◽  
Jin Myung Choi ◽  
Woohyun Kim ◽  
...  
Keyword(s):  
High Speed ◽  
Random Number ◽  
Random Number Generator ◽  
Number Generator ◽  
True Random Number Generator
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