Enhancement-Mode Operation of Nanochannel Array (NCA) AlGaN/GaN HEMTs

2012 ◽  
Vol 33 (3) ◽  
pp. 354-356 ◽  
Author(s):  
Shenghou Liu ◽  
Yong Cai ◽  
Guodong Gu ◽  
Jinyan Wang ◽  
Chunhong Zeng ◽  
...  
Keyword(s):  
Enhancement Mode ◽  
Mode Operation ◽  
Gan Hemts ◽  
Nanochannel Array

Enhancement-mode AlGaN/GaN HEMTs with thin InGaN cap layer

2008 ◽  
Vol 5 (6) ◽  
pp. 1929-1931 ◽  
Author(s):  
M. Ito ◽  
S. Kishimoto ◽  
F. Nakamura ◽  
T. Mizutani
Keyword(s):  
Enhancement Mode ◽  
Cap Layer ◽  
Gan Hemts

Enhancement-mode AlGaN/GaN HEMTs on silicon substrate

2006 ◽  
Vol 53 (6) ◽  
pp. 1474-1477 ◽  
Author(s):  
Shuo Jia ◽  
Yong Cai ◽  
Deliang Wang ◽  
Baoshun Zhang ◽  
K.M. Lau ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Enhancement Mode ◽  
Gan Hemts

Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate

2003 ◽  
Vol 47 (11) ◽  
pp. 2081-2084 ◽  
Author(s):  
Jaesun Lee ◽  
Dongmin Liu ◽  
Zhaojun Lin ◽  
Wu Lu ◽  
Jeffrey S. Flynn ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
Enhancement Mode ◽  
Gan Hemts

Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions

2019 ◽  
Vol 55 (2) ◽  
pp. 1807-1816 ◽  
Author(s):  
He Li ◽  
Xiao Li ◽  
Xiaodan Wang ◽  
Xintong Lyu ◽  
Haiwei Cai ◽  
...  
Keyword(s):  
Short Circuit ◽  
Enhancement Mode ◽  
Gan Hemts

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

scholarly journals Temperature‐dependent dynamic R DS,ON under different operating conditions in enhancement‐mode GaN HEMTs

2020 ◽  
Vol 13 (3) ◽  
pp. 456-462
Author(s):  
Yuan Li ◽  
Yuanfu Zhao ◽  
Alex Q. Huang ◽  
Liqi Zhang ◽  
Qingyun Huang ◽  
...  
Keyword(s):  
Operating Conditions ◽  
Temperature Dependent ◽  
Enhancement Mode ◽  
Gan Hemts
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