High-Performance Oxide Thin-Film Transistors Using a Volatile Nitrate Precursor for Low-Temperature Solution Process

2012 ◽  
Vol 33 (1) ◽  
pp. 68-70 ◽  
Author(s):  
Woong Hee Jeong ◽  
Jung Hyeon Bae ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Solution Process ◽  
Oxide Thin Film ◽  
Nitrate Precursor ◽  
Temperature Solution

Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

2015 ◽  
Vol 3 (4) ◽  
pp. 854-860 ◽  
Author(s):  
Chang-Ho Choi ◽  
Seung-Yeol Han ◽  
Yu-Wei Su ◽  
Zhen Fang ◽  
Liang-Yu Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Annealing Temperatures ◽  
Nitrate Precursor ◽  
Temperature Solution ◽  
Indium Oxide Thin Film

In this study, we fabricate amorphous indium oxide thin film transistors (TFTs) on a display glass substrate at various annealing temperatures from 200 °C to 300 °C.

scholarly journals High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

2014 ◽  
Vol 26 (2) ◽  
pp. 1195-1203 ◽  
Author(s):  
Kulbinder K. Banger ◽  
Rebecca L. Peterson ◽  
Kiyotaka Mori ◽  
Yoshihisa Yamashita ◽  
Timothy Leedham ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Temperature Solution ◽  
Doped Oxide

Low-temperature fabrication of high performance indium oxide thin film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (47) ◽  
pp. 37807-37813 ◽  
Author(s):  
You Meng ◽  
Guoxia Liu ◽  
Ao Liu ◽  
Huijun Song ◽  
Yang Hou ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Solution Process ◽  
Oxide Thin Film ◽  
Indium Oxide Thin Film

In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a fully-solution process at low temperature.

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