Low-temperature fabrication of high performance indium oxide thin film transistors
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In this study, indium oxide (In2O3) thin-film transistors (TFTs) were fabricated by a fully-solution process at low temperature.
2013 ◽
Vol 52
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pp. 060204
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2016 ◽
Vol 4
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pp. 2072-2078
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2015 ◽
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pp. 854-860
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2017 ◽
Vol 10
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pp. 518-521
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2011 ◽
Vol 133
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pp. 5166-5169
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2009 ◽
Vol 12
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pp. H336
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2008 ◽
Vol 130
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pp. 12580-12581
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