High-Performance 4H–SiC-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors With $\hbox{SiO}_{2}$ and $\hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{SiO}_{2}$ Films

2011 ◽  
Vol 32 (12) ◽  
pp. 1722-1724 ◽  
Author(s):  
Feng Zhang ◽  
Guosheng Sun ◽  
Huolin Huang ◽  
Zhengyun Wu ◽  
Lei Wang ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Ultraviolet Photodetectors

High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga2O3 layer

2019 ◽  
Vol 44 (9) ◽  
pp. 2197 ◽  
Author(s):  
Ruilin Meng ◽  
Xiaoli Ji ◽  
Zheng Lou ◽  
Jiankun Yang ◽  
Yonghui Zhang ◽  
...  
Keyword(s):  
High Performance ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Ultraviolet Photodetectors

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

GaN-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer

2012 ◽  
Vol 51 ◽  
pp. 04DG15 ◽  
Author(s):  
Chin-Hsiang Chen ◽  
Chia-Ming Tsai ◽  
Chung-Fu Cheng ◽  
Shuo-Fu Yen ◽  
Peng-Yin Su ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Ultraviolet Photodetectors

High-performance GaAs metal insulator semiconductor transistor

1982 ◽  
Vol 3 (4) ◽  
pp. 104-105 ◽  
Author(s):  
P.L. Fleming ◽  
A. Meulenberg ◽  
H.E. Carlson
Keyword(s):  
High Performance ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

GaN-Based Metal–Insulator–Semiconductor Ultraviolet Photodetectors with CsF Current-Suppressing Layer

2012 ◽  
Vol 51 (4S) ◽  
pp. 04DG15 ◽  
Author(s):  
Chin-Hsiang Chen ◽  
Chia-Ming Tsai ◽  
Chung-Fu Cheng ◽  
Shuo-Fu Yen ◽  
Peng-Yin Su ◽  
...  
Keyword(s):  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Ultraviolet Photodetectors

Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide

2007 ◽  
Vol 46 (8A) ◽  
pp. 5119-5121 ◽  
Author(s):  
Gow-Huei Yang ◽  
Jun-Dar Hwang ◽  
Chih-Hsueh Lan ◽  
Chien-Mao Chan ◽  
Hone-Zem Chen ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Liquid Phase Deposition ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Ultraviolet Photodetectors
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