The Effect of Dynamic Bias Stress on the Photon-Enhanced Threshold Voltage Instability of Amorphous HfInZnO Thin-Film Transistors

2011 ◽  
Vol 32 (2) ◽  
pp. 164-166 ◽  
Author(s):  
Kyoung-Seok Son ◽  
Hyun-Suk Kim ◽  
Wan-Joo Maeng ◽  
Ji-Sim Jung ◽  
Kwang-Hee Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Bias Stress ◽  
Voltage Instability ◽  
Dynamic Bias

Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Bias Stress

1990 ◽  
Vol 192 ◽  
Author(s):  
Tetsu Ogawa ◽  
Sadayoshi Hotta ◽  
Horoyoshi Takezawa
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
The Other ◽  
Time Dependent ◽  
Silicon Thin Film ◽  
Bias Stress

ABSTRACTThrough the time and temperature dependence measurements on threshold voltage shifts (Δ VT) in amorphous silicon thin film transistors, it has been found that two separate instability mechanisms exist; within short stress time ranges Δ Vτ increases as log t and this behavior corresponds to charge trapping in SiN. On the other hand, in long stress time ranges Δ VT increases as t t/4 and can be explained by time-dependent creation of trap in a-Si.

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