Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

2010 ◽  
Vol 31 (9) ◽  
pp. 903-905 ◽  
Author(s):  
Sarunya Bangsaruntip ◽  
Guy M. Cohen ◽  
Amlan Majumdar ◽  
Jeffrey W. Sleight
Keyword(s):  
Silicon Nanowire ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Nanowire Mosfets

scholarly journals Potential and Quantum Threshold Voltage Modeling of Gate-All-Around Nanowire MOSFETs

2013 ◽  
Vol 2013 ◽  
pp. 1-9 ◽  
Author(s):  
M. Karthigai Pandian ◽  
N. B. Balamurugan ◽  
A. Pricilla
Keyword(s):  
Threshold Voltage ◽  
Silicon Nanowire ◽  
Electrical Potential ◽  
Short Channel Effects ◽  
Short Channel ◽  
Weak Inversion ◽  
Silicon Devices ◽  
Proposed Model ◽  
Channel Effects ◽  
Quantum Mechanical Effects

An improved physics-based compact model for a symmetrically biased gate-all-around (GAA) silicon nanowire transistor is proposed. Short channel effects and quantum mechanical effects caused by the ultrathin silicon devices are considered in modelling the threshold voltage. Device geometrics play a very important role in multigate devices, and hence their impact on the threshold voltage is also analyzed by varying the height and width of silicon channel. The inversion charge and electrical potential distribution along the channel are expressed in their closed forms. The proposed model shows excellent accuracy with TCAD simulations of the device in the weak inversion regime.

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 ◽  
Vol 54 (8) ◽  
pp. 1943-1952 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
Q. Rafhay ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short-channel effects in SOI MOSFETs

1989 ◽  
Vol 36 (3) ◽  
pp. 522-528 ◽  
Author(s):  
S. Veeraraghavan ◽  
J.G. Fossum
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects
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