Comments on “Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation”

Daniel Connelly; Paul Clifton

doi:10.1109/led.2010.2044360

Comments on “Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation”

IEEE Electron Device Letters ◽

10.1109/led.2010.2044360 ◽

2010 ◽

Vol 31 (5) ◽

pp. 417-418 ◽

Cited By ~ 10

Author(s):

Daniel Connelly ◽

Paul Clifton

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Chlorine Ion

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Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation

IEEE Electron Device Letters ◽

10.1109/led.2009.2031828 ◽

2009 ◽

Vol 30 (11) ◽

pp. 1140-1142 ◽

Cited By ~ 12

Author(s):

Wei-Yip Loh ◽

H. Etienne ◽

B. Coss ◽

I. Ok ◽

D. Turnbaugh ◽

...

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Chlorine Ion

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Low Electron Schottky Barrier Height of NiGe/Ge Achieved by Ion Implantation After Germanidation Technique

IEEE Electron Device Letters ◽

10.1109/led.2012.2220954 ◽

2012 ◽

Vol 33 (12) ◽

pp. 1687-1689 ◽

Cited By ~ 16

Author(s):

Zhiqiang Li ◽

Xia An ◽

Min Li ◽

Quanxin Yun ◽

Meng Lin ◽

...

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height

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PtSi/n-type Si Schottky barrier height change by H+ ion implantation near the interface region

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(87)80085-x ◽

1987 ◽

Vol 19-20 ◽

pp. 431-433 ◽

Cited By ~ 2

Author(s):

P. Hadizad ◽

A.S. Yapsir ◽

T.-M. Lu ◽

J.C. Corelli ◽

A. Sugerman

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Interface Region ◽

Height Change

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Schottky barrier height reduction of NiGe/Ge junction by P ion implantation for metal source/drain Ge CMOS devices

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2014.6867050 ◽

2014 ◽

Cited By ~ 1

Author(s):

Hiroshi Oka ◽

Yuya Minoura ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Metal Source ◽

Height Reduction

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The influence of ion-implantation on the effective Schottky barrier height of NiGe/n-Ge contacts

Chemical Physics ◽

10.1016/j.chemphys.2019.110626 ◽

2020 ◽

Vol 530 ◽

pp. 110626

Author(s):

Mengrao Tang ◽

Honghao Cai

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height

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Schottky Barrier Height Control by Using Knock-on Effect in Ion Implantation

Japanese Journal of Applied Physics ◽

10.7567/jjaps.16s1.53 ◽

1977 ◽

Vol 16 (S1) ◽

pp. 53 ◽

Cited By ~ 5

Author(s):

Hiroshi Ishiwara ◽

Seijiro Furukawa

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Height Control

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Schottky-Barrier Height Tuning by Means of Ion Implantation Into Preformed Silicide Films Followed by Drive-In Anneal

IEEE Electron Device Letters ◽

10.1109/led.2007.900295 ◽

2007 ◽

Vol 28 (7) ◽

pp. 565-568 ◽

Cited By ~ 87

Author(s):

Zhen Zhang ◽

Zhijun Qiu ◽

Ran Liu ◽

M. Ostling ◽

Shi-Li Zhang

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height

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Schottky barrier height modulation at NiGe/Ge interface by phosphorous ion implantation and its application to Ge-based CMOS devices

2015 15th International Workshop on Junction Technology (IWJT) ◽

10.1109/iwjt.2015.7467099 ◽

2015 ◽

Author(s):

Takuji Hosoi ◽

Hiroshi Oka ◽

Yuya Minoura ◽

Takayoshi Shimura ◽

Heiji Watanabe

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height

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Tuning of the Schottky barrier height in NiGe/n-Ge using ion-implantation after germanidation technique

Applied Physics Letters ◽

10.1063/1.3378878 ◽

2010 ◽

Vol 96 (14) ◽

pp. 143502 ◽

Cited By ~ 16

Author(s):

Yue Guo ◽

Xia An ◽

Ru Huang ◽

Chunhui Fan ◽

Xing Zhang

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height

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Schottky Barrier Height Control by Using Knock-on Effect in Ion Implantation

10.7567/ssdm.1976.a-1-5 ◽

1976 ◽

Author(s):

Hiroshi Ishiwara ◽

Seijiro Furukawa

Keyword(s):

Ion Implantation ◽

Schottky Barrier ◽

Barrier Height ◽

Schottky Barrier Height ◽

Height Control

Download Full-text