Three-Dimensional Stackable Electromechanical Nonvolatile Memory Cell (H Cell) for Four-Bit Operation

2010 ◽  
Vol 31 (1) ◽  
pp. 29-31 ◽  
Author(s):  
Woo Young Choi
Keyword(s):  
Nonvolatile Memory ◽  
Three Dimensional ◽  
Memory Cell

Flash Memory Scaling

MRS Bulletin ◽  
2004 ◽  
Vol 29 (11) ◽  
pp. 814-817 ◽  
Author(s):  
Al Fazio
Keyword(s):  
Data Storage ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Three Dimensional ◽  
Memory Cell ◽  
Current Status ◽  
Memory Cells ◽  
Technology Scaling ◽  
Complex Structural ◽  
High Dielectric

AbstractIn order to meet technology scaling in the field of solid-state memory and data storage, the mainstream transistor-based flash technologies will start evolving to incorporate material and structural innovations. Dielectric scaling in nonvolatile memories is approaching the point where new approaches will be required to meet the scaling requirements while simultaneously meeting the reliability and performance requirements of future products. High-dielectric-constant materials are being explored as possible candidates to replace the traditional SiO2 and ONO (oxide/nitride/oxide) films used today in memory cells. Likewise, planar-based memory cell scaling is approaching the point where scaling constraints force exploration of new materials and nonplanar, three-dimensional scaling alternatives. This article will review the current status and discuss the approaches being explored to provide scaling solutions for future transistor floating-gate-based nonvolatile memory products. Based on the introduction of material innovations, it is expected that the planar transistor-based flash memory cells can scale through at least the end of the decade (2010) using techniques that are available today or projected to be available in the near future. More complex, structural innovations will be required to achieve further scaling.

Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

2012 ◽  
Vol 52 (8) ◽  
pp. 1627-1631 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Chih-Ting Lin ◽  
Chi-Hsien Huang ◽  
Chao-Sung Lai ◽  
Chin-Hsiang Liao
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Charge Storage ◽  
Data Retention ◽  
Retention Characteristics

The dual role of PZT in metal-PZT-Al2O3 structure for nonvolatile memory cell

2010 ◽  
Author(s):  
Sharon Cui ◽  
Dongseog Eun ◽  
Bozidar Marinkovic ◽  
Cheng-Yi Peng ◽  
Xiao Pan ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Dual Role

Voltage-readable nonvolatile memory cell with programmable ferroelectric multistates in organic inverter configuration

2013 ◽  
Vol 14 (5) ◽  
pp. 1231-1236 ◽  
Author(s):  
Min-Hoi Kim ◽  
Gyu Jeong Lee ◽  
Chang-Min Keum ◽  
Sin-Doo Lee
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Organic Inverter

Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor

2007 ◽  
Vol 28 (5) ◽  
pp. 440-442 ◽  
Author(s):  
Russell Duane ◽  
Quentin Rafhay ◽  
M. Florian Beug ◽  
Michiel van Duuren
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Floating Gate

A 3.3 V operation nonvolatile memory cell technology

2003 ◽  
Author(s):  
K. Yoshikawa ◽  
E. Sakagami ◽  
S. Mori ◽  
N. Arai ◽  
K. Narita ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Cell Technology

scholarly journals Sonos Nonvolatile Memory Cell Programming Characteristics

2011 ◽  
Vol 124 (1) ◽  
pp. 131-139 ◽  
Author(s):  
Todd C. MacLeod ◽  
Thomas A. Phillips ◽  
Fat D. Ho
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell
Sign in / Sign up

Export Citation Format

Share Document