scholarly journals Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

AIP Advances ◽  
2017 ◽  
Vol 7 (7) ◽  
pp. 075111 ◽  
Author(s):  
Joong-Won Shin ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Thermal Budget ◽  
Low Thermal Budget

Effect of Simplified-Single-Step Microwave Annealing in O2 Ambient for High Performance Solution-Processed In–Ga–Zn–O Thin Film Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4163-4169
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
High Performance ◽  
Stress Test ◽  
Single Step ◽  
Solution Processed ◽  
Thermal Budget ◽  
Microwave Annealing ◽  
Low Thermal Budget

In this study, we propose a simplified-single-step microwave annealing (S3-MWA) technique in an O2 ambient, which is a low thermal budget heat treatment method, for the application in solutionprocessed amorphous indium-gallium-zinc oxide (a-IGZO) thin films. For the application of solutionprocessed a-IGZO films in electronic devices, a multi-step post deposition annealing (PDA) process, which involves baking at low temperatures to vaporize the solvent, and high temperature conventional thermal annealing to remove defects in the film, is essential. To simplify the multi-step PDA process, we studied the possibility of reducing the thermal process temperature and time by replacing it with a single-step PDA process using microwave equipment. The electrical properties were compared to investigate the effect of the annealing method and ambient on solution-processed a-IGZO thin film transistors (TFTs). As a result, the S3-MWA-processed a-IGZO TFTs were found to exhibit superior electrical characteristics in comparison with the conventional PDA-processed devices. It was found that the O2 ambient process not only shortened the annealing time of S3-MWA but also improved the electrical properties. Furthermore, the S3-MWA was superior to the conventional PDA in the evaluation of device reliability under a gate bias stress test. The S3-MWA process in the O2 ambient was also responsible for improving the reliability of solution-processed a-IGZO TFTs. Therefore, we confirmed that the proposed S3-MWA in the O2 ambient is a more effective and promising technique than conventional PDA for the low thermal budget treatment of solution-processed a-IGZO TFTs.

High-performance low-temperature solution-processable ZnO thin film transistors by microwave-assisted annealing

2011 ◽  
Vol 21 (4) ◽  
pp. 1102-1108 ◽  
Author(s):  
Taehwan Jun ◽  
Keunkyu Song ◽  
Youngmin Jeong ◽  
Kyoohee Woo ◽  
Dongjo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Zno Thin Film ◽  
Microwave Assisted ◽  
Temperature Solution ◽  
Solution Processable

High performance self-aligned top-gate ZnO thin film transistors using sputtered Al2O3 gate dielectric

2012 ◽  
Vol 520 (21) ◽  
pp. 6681-6683 ◽  
Author(s):  
Rongsheng Chen ◽  
Wei Zhou ◽  
Meng Zhang ◽  
Hoi Sing Kwok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectric ◽  
Zno Thin Film ◽  
Al2o3 Gate Dielectric

High Performance ZnO Thin-Film Transistors using High-ҝ TiHfO Gate Dielectrics

2009 ◽  
Author(s):  
N. C. Su ◽  
C. C. Huang ◽  
Y. H. Chen ◽  
C. K. Chiang ◽  
H. Y. Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Dielectrics ◽  
Zno Thin Film
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