Flicker Noise and Its Degradation Characteristics Under Electrical Stress in MOSFETs With Thin Strained-Si/SiGe Dual-Quantum Well

2007 ◽  
Vol 28 (7) ◽  
pp. 603-605 ◽  
Author(s):  
Y. Jiang ◽  
W.Y. Loh ◽  
D.S.H. Chan ◽  
Y.Z. Xiong ◽  
C. Ren ◽  
...  
Keyword(s):  
Quantum Well ◽  
Flicker Noise ◽  
Strained Si ◽  
Electrical Stress ◽  
Dual Quantum

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Flicker-Noise Improvement in 100-nm $L_{g}\ \hbox{Si}_{0.50}\hbox{Ge}_{0.50}$ Strained Quantum-Well Transistors Using Ultrathin Si Cap Layer

2010 ◽  
Vol 31 (1) ◽  
pp. 47-49 ◽  
Author(s):  
Feng Li ◽  
Se-Hoon Lee ◽  
Zhao Fang ◽  
P. Majhi ◽  
Qiming Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Flicker Noise ◽  
Cap Layer ◽  
Strained Quantum Well

Experimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well

2012 ◽  
Vol 111 (7) ◽  
pp. 073715 ◽  
Author(s):  
Takahisa Tanaka ◽  
Go Tsuchiya ◽  
Yusuke Hoshi ◽  
Kentarou Sawano ◽  
Yasuhiro Shiraki ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Quantum Well ◽  
Temperature Dependence ◽  
Electron Mobility ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Strained Si

Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes

1998 ◽  
Vol 189-190 ◽  
pp. 808-811 ◽  
Author(s):  
Marek Osiński ◽  
Daniel L Barton ◽  
Piotr Perlin ◽  
Jinhyun Lee
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Electrical Stress

Single-quantum well InGaN green light emitting diode degradation under high electrical stress

1999 ◽  
Vol 39 (8) ◽  
pp. 1219-1227 ◽  
Author(s):  
Daniel L. Barton ◽  
Marek Osinski ◽  
Piotr Perlin ◽  
Petr G. Eliseev ◽  
Jinhyun Lee
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Green Light ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Electrical Stress
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