Dual‐wavelength AlGaAs/GaAs laser by selective removal of a quantum well in an asymmetric dual quantum well structure

1996 ◽  
Vol 68 (3) ◽  
pp. 284-286 ◽  
Author(s):  
K. J. Beernink ◽  
D. Sun ◽  
R. L. Thornton ◽  
D. W. Treat
Keyword(s):  
Quantum Well ◽  
Selective Removal ◽  
Dual Wavelength ◽  
Quantum Well Structure ◽  
Gaas Laser ◽  
Dual Quantum

scholarly journals Polarization dependent coupling of surface plasmon on a one-dimensional Ag grating with an InGaN∕GaN dual-quantum-well structure

2008 ◽  
Vol 92 (1) ◽  
pp. 013108 ◽  
Author(s):  
Kun-Ching Shen ◽  
Cheng-Yen Chen ◽  
Chi-Feng Huang ◽  
Jhy-Yang Wang ◽  
Yen-Cheng Lu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Surface Plasmon ◽  
One Dimensional ◽  
Quantum Well Structure ◽  
Dual Quantum

Research on the Electronic Tunneling in Asymmetric Dual-Quantum-Well

2012 ◽  
Vol 542-543 ◽  
pp. 953-958
Author(s):  
Xia Zheng Bu ◽  
Jian Wang ◽  
Ju Liang Shi ◽  
Hui Zhao
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Inductively Coupled Plasma ◽  
Energy Levels ◽  
Tunneling Effect ◽  
Material System ◽  
Inductively Coupled ◽  
Quantum Well Structure ◽  
Electronic Tunneling ◽  
Dual Quantum

An Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As asymmetric dual-quantum-well structure was designed. The barrier thickness between the dual quantum wells is 48Å, it is thick enough to inhibit the mutual cross-interference between the energy levels within the two quantum wells. This material system was grown on a GaAs substrate by solid source molecular beam epitaxy, and the device was fabricated with rat electrodes using inductively coupled plasma etching mesa process. The tunneling effect that electron transfer through the dual-quantum-well structure was observed in the device I-V feature, it was calculated and demonstrated by transmission matrix method and Ariy Function numerical transform.

Dual-Wavelength Twin-Stripe Laser Using Single Quantum Well Structure

1987 ◽  
Author(s):  
Yasunori TOKUDA ◽  
Yuji ABE ◽  
Teruhito MATSUI ◽  
Noriaki TSUKADA ◽  
Takashi NAKAYAMA
Keyword(s):  
Quantum Well ◽  
Dual Wavelength ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure ◽  
Stripe Laser

Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

1994 ◽  
Vol 22 (12) ◽  
pp. 977-984
Author(s):  
Yoshiaki HASEGAWA ◽  
Takashi EGAWA ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Strained Quantum Well

Modulation-doped (AlGa)As/GaAs quantum well structure with high electron sheet density

1989 ◽  
Vol 25 (17) ◽  
pp. 1147
Author(s):  
A.L. Powell ◽  
J.S. Roberts ◽  
P.I. Rockett ◽  
T.J. Foster ◽  
L. Eaves
Keyword(s):  
Quantum Well ◽  
High Electron ◽  
Quantum Well Structure ◽  
Electron Sheet ◽  
Sheet Density

High-Quality GaAsxP1-x/In0.13Ga0.87P Quantum Well Structure Grown on Si Substrate with a Very Few Threading Dislocations

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6645-6649 ◽  
Author(s):  
Yasuhiro Fujimoto ◽  
Hiroo Yonezu ◽  
Satoshi Irino ◽  
Katsuya Samonji ◽  
Kenji Momose ◽  
...  
Keyword(s):  
Quantum Well ◽  
Threading Dislocations ◽  
Si Substrate ◽  
High Quality ◽  
Quantum Well Structure
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