scholarly journals Lifetime Extension of RF MEMS Direct Contact Switches in Hot Switching Operations by Ball Grid Array Dimple Design

2007 ◽  
Vol 28 (6) ◽  
pp. 479-481 ◽  
Author(s):  
Linda L. W. Chow ◽  
John L. Volakis ◽  
Kazuhiro Saitou ◽  
Katsuo Kurabayashi
Author(s):  
Brian Jensen ◽  
Zhongde Wang ◽  
Kazuhiro Saitou ◽  
John L. Volakis ◽  
Katsuo Kurabayashi

Improving the power handling capability of direct contact RF MEMS switches requires a knowledge of conditions at the contact. This paper models the temperature rise in a direct contact RF MEMS switch, including the effects of electrical and thermal contact resistance. The maximum temperature in the beam is found to depend strongly on the power dissipation at the contact, with almost no contribution from dissipation due to currents in the rest of the switch. Moreover, the maximum temperature is found to exceed the limit for metal softening for a significant range of values of thermal and electrical contact resistance. Since local contact asperity temperature can be hundreds of degrees higher than the bulk material temperature modeled here, these results underscore the importance of understanding and controlling thermal and electrical contact resistance in the switch.


Author(s):  
Mohammed Shalaby ◽  
Zhongde Wang ◽  
Linda L. W. Chow ◽  
Brian D. Jensen ◽  
John L. Volakis ◽  
...  

This paper presents the design optimization of a RF MEMS direct contact cantilever switch for minimum actuation voltage and opening time, and maximum power handling capability. The design variables are the length and thickness of the entire cantilever, the widths of the sections of the cantilever, and the dimple size. The actuation voltage is obtained using a 3D structural-electrostatic FEM model, and the opening time is obtained using the same FEM model and the experimental model of adhesion at the contact surfaces developed in our previous work. Since the precise control of the contact resistance during the micro machining process is practically impossible, the power handling capability is estimated as the ratio of the RMS power of the RF current ("signal") passing through the switch to the contact temperature ("noise") resulting from the possible range of the contact resistance. The resulting robust optimization problem is solved using a Strength Pareto Evolutionary Algorithm, to obtain design alternatives exhibiting different trade-offs among the three objectives. The results show that there exists substantial room for improved designs of RF MEMS direct-contact switches.


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