High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

2007 ◽  
Vol 28 (5) ◽  
pp. 328-331 ◽  
Author(s):  
Yong Cai ◽  
Zhiqun Cheng ◽  
Zhenchuan Yang ◽  
Chak Wah Tang ◽  
Kei May Lau ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Gan Hemts ◽  
High Temperature Operation

Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application

2016 ◽  
Vol 13 (4) ◽  
pp. 143-154 ◽  
Author(s):  
Jim Holmes ◽  
A. Matthew Francis ◽  
Ian Getreu ◽  
Matthew Barlow ◽  
Affan Abbasi ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Logic Synthesis ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Timing Models ◽  
High Temperature Operation

In the last decade, significant effort has been expended toward the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field-effect transistors and metal-oxide-semiconductor (MOS) field-effect transistors have been pursued and demonstrated. More recently, advances in low-power complementary MOS (CMOS) devices have enabled the development of highly integrated digital, analog, and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) of several building block circuits for extended periods (up to 100 h) are presented. These designs, created using the Raytheon UK's HiTSiC® CMOS process, present the densest, lowest-power integrated circuit technology capable of operating at extreme temperatures for any period. Based on these results, Venus nominal temperature (470°C) transistor models and gate-level timing models were created using parasitic extracted simulations. The complete CMOS digital gate library is suitable for logic synthesis and lays the foundation for complex integrated circuits, such as a microcontroller. A 16-bit microcontroller, based on the OpenMSP 16-bit core, is demonstrated through physical design and simulation in SiC-CMOS, with an eye for Venus as well as terrestrial applications.

Digital and Analogue Integrated Circuits in Silicon Carbide for High Temperature Operation

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000373-000377 ◽  
Author(s):  
E.P Ramsay ◽  
D.T. Clark ◽  
J.D. Cormack ◽  
A.E. Murphy ◽  
D.A Smith ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Integrated Circuits ◽  
Integrated Circuit ◽  
Nand Gate ◽  
Cmos Process ◽  
Flip Flop ◽  
Aero Engines ◽  
Simple Logic ◽  
High Temperature Operation

A need for high temperature integrated circuits is emerging in a number of application areas. As Silicon Carbide power discrete devices become more widely available, there is a growing need for control ICs capable of operating at the same temperatures and mounted on the same modules. Also, the use of high temperature sensors, in, for example, aero engines and in deep hydrocarbon and geothermal drilling applications results in a demand for high temperature sensor interface ICs. This paper presents new results on a range of simple logic and analogue circuits fabricated on a developing Silicon Carbide CMOS process which is intended for mixed signal integrated circuit applications such as those above. A small family of logic circuits, pin compatible with the 74xx series TTL logic parts, has been designed, fabricated and tested and includes, for example, a Quad Nand gate and a Dual D-type flip-flop. These have been found to be functional from room temperature up to 400°C. Analogue blocks have been investigated with a view to using switched capacitor or autozero techniques to compensate for temperature and time induced drifts, allowing very high temperature operation.

Analysis of the degradation of AlGaN/GaN HEMTs by high-temperature operation tests

2014 ◽  
Vol 64 (10) ◽  
pp. 1446-1450 ◽  
Author(s):  
Jong-Min Lee ◽  
Byoung-Gue Min ◽  
Cheol-Won Ju ◽  
Ho-Kyun Ahn ◽  
Jae-Kyoung Mun ◽  
...  
Keyword(s):  
High Temperature ◽  
Gan Hemts ◽  
High Temperature Operation

Reliability of High-Temperature Operation for GaN-Based OPAMP

2009 ◽  
Vol 1195 ◽  
Author(s):  
Kazuki Nomoto ◽  
Kazuya Hasegawa ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Silicon Substrate ◽  
Operational Amplifier ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Current Collapse ◽  
Source Resistance ◽  
Gan Hemts ◽  
High Temperature Operation

AbstractWe demonstrated electrical characteristics of operational amplifier (OPAMP) circuits fabricated by GaN/AlGaN/GaN HEMTs operating over 100 oC. GaN/AlGaN/GaN HEMTs, with the extremely low source resistance were fabricated by multiple ion implantation, precisely controlled ion-implanted (I/I) resistors and Schottky barrier diodes were integrated on the silicon substrate. The GaN cap layer on the AlGaN was grown to decrease the gate leakage current and current collapse for AlGaN/GaN HEMTs.

Degradation mechanism of AlGaN/GaN HEMTs during high temperature operation stress

2017 ◽  
Vol 33 (1) ◽  
pp. 015019 ◽  
Author(s):  
Y Q Chen ◽  
X Y Liao ◽  
C Zeng ◽  
C Peng ◽  
Y Liu ◽  
...  
Keyword(s):  
High Temperature ◽  
Degradation Mechanism ◽  
Gan Hemts ◽  
High Temperature Operation

High-Temperature Operation of Photonic-Crystal Lasers for On-Chip Optical Interconnection

2012 ◽  
Vol E95.C (7) ◽  
pp. 1244-1251 ◽  
Author(s):  
Koji TAKEDA ◽  
Tomonari SATO ◽  
Takaaki KAKITSUKA ◽  
Akihiko SHINYA ◽  
Kengo NOZAKI ◽  
...  
Keyword(s):  
High Temperature ◽  
Photonic Crystal ◽  
Optical Interconnection ◽  
On Chip ◽  
High Temperature Operation

KUBOTA UCX

Alloy Digest ◽  
2008 ◽  
Vol 57 (6) ◽  
Keyword(s):  
Corrosion Resistance ◽  
High Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Temperature Performance ◽  
High Temperature Operation ◽  
Oxidation And Corrosion ◽  
Very High

Abstract Kubota UCX was developed for very high temperature operation for ethylene pyrolysis service. The alloy also has excellent oxidation and corrosion resistance. This datasheet provides information on composition, physical properties, elasticity, and tensile properties. It also includes information on high temperature performance and corrosion resistance as well as casting and joining. Filing Code: Ni-663. Producer or source: Kubota Metal Corporation, Fahramet Division.

An Alternative to High-Temperature and Acid/Solvent-Based Methods for Removing Integrated Circuits from Ceramic or Other Problem Substrates

2005 ◽  
Author(s):  
Carl M. Nail
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Success Rate ◽  
Mechanical Damage ◽  
Test Equipment ◽  
High Success Rate ◽  
Automated Test Equipment ◽  
Removal Method ◽  
Automated Test ◽  
Conventional Methods

Abstract Dice must often be removed from their packages and reassembled into more suitable packages for them to be tested in automated test equipment (ATE). Removing bare dice from their substrates using conventional methods poses risks for chemical, thermal, and/or mechanical damage. A new removal method is offered using metallography-based and parallel polishing-based techniques to remove the substrate while exposing the die to minimized risk for damage. This method has been tested and found to have a high success rate once the techniques are learned.

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