Thin film transistors fabricated at low temperatures in single crystal silicon films on glass substrates

2002 ◽  
Author(s):  
D.N. Kouvatsos ◽  
G.T. Sarcona ◽  
D. Tsoukalas ◽  
M.K. Hatalis ◽  
D. Goustouridis ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Crystal Silicon ◽  
Glass Substrates

Thin-Film Transistors in CO2-Laser Crystallized Silicon Films On Fused Silica

1982 ◽  
Vol 13 ◽  
Author(s):  
N. M. Johnson ◽  
H. C. Tuan ◽  
M. D. Moyer ◽  
M. J. Thompson ◽  
D. K. Biegelsen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Fused Silica ◽  
Silicon Films ◽  
Silicon On Insulator ◽  
Bulk Glass ◽  
Crystal Silicon ◽  
Glass Substrates

ABSTRACTThin-film transistors (TFT) have been fabricated in scanned CO2 laser-crystallized silicon films on bulk fused silica. In n-channel enhancement-mode transistors, it is demonstrated that an excessively large leakage current can be electric-field modulated with a gate electrode located beneath the silicon layer. This dual-gate configuration provides direct verification on bulk glass substrates of back-channel leakage as has recently been demonstrated for beam-crystallized silicon films on thermal oxides over silicon wafers. With the application of deep-channel ion implantation to suppress back-channel leakage, high-peformance TFTs have been fabricated in single-crystal silicon films on fused silica. The results demonstrate that scanned CO 2 laser processing of silicon films on bulk glass can provide the basis for a silicon-on-insulator technology.

Single crystal silicon thin film transistors fabricated at low process temperatures on glass substrates

1996 ◽  
Vol 32 (8) ◽  
pp. 775 ◽  
Author(s):  
D.N. Kouvatsos ◽  
D. Tsoukalas ◽  
G.T. Sarcona ◽  
M.K. Hatalis ◽  
J. Stoemenos
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
Glass Substrates

High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers

2006 ◽  
Vol 100 (1) ◽  
pp. 013708 ◽  
Author(s):  
Hao-Chih Yuan ◽  
Zhenqiang Ma ◽  
Michelle M. Roberts ◽  
Donald E. Savage ◽  
Max G. Lagally
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Flexible Polymers ◽  
Silicon Thin Film ◽  
Crystal Silicon

scholarly journals Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer

Nanomaterials ◽  
2018 ◽  
Vol 8 (12) ◽  
pp. 1060 ◽  
Author(s):  
Jiaqi Zhang ◽  
Yi Zhang ◽  
Dazheng Chen ◽  
Weidong Zhu ◽  
He Xi ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Single Crystal ◽  
Ohmic Contact ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Bending Test ◽  
Crystal Silicon ◽  
Silicon Nanomembrane ◽  
Tio2 Interlayer

Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO2) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO2 is oxygen-vacancies rich, which may dope TiO2 and contribute to a lower resistance. By inserting TiO2 between Ti and n-Si, Ids of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO2 insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO2 interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs.

High-speed mechanically flexible single-crystal silicon thin-film transistors on plastic substrates

2006 ◽  
Vol 27 (6) ◽  
pp. 460-462 ◽  
Author(s):  
Jong-Hyun Ahn ◽  
Hoon-Sik Kim ◽  
Keon Jae Lee ◽  
Zhengtao Zhu ◽  
E. Menard ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Silicon Thin Film ◽  
Crystal Silicon ◽  
Plastic Substrates
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