Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stress

2006 ◽  
Vol 27 (7) ◽  
pp. 585-587 ◽  
Author(s):  
D. Saha ◽  
D. Varghese ◽  
S. Mahapatra
Keyword(s):  
Valence Band ◽  
Hole Injection ◽  
Interface Trap ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Anode Hole ◽  
Valence Band Hole ◽  
Anode Hole Injection

scholarly journals Fundamental limits of hot carrier injection from metal in nanoplasmonics

Nanophotonics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 453-471 ◽  
Author(s):  
Jacob B. Khurgin
Keyword(s):  
Momentum Conservation ◽  
Carrier Injection ◽  
Quantum Processes ◽  
Fundamental Limits ◽  
Hot Carrier ◽  
Hot Carrier Injection ◽  
Single Temperature ◽  
Carrier Extraction ◽  
Non Equilibrium

AbstractThe evolution of non-equilibrium carriers excited in the process of decay of surface plasmon polaritons (SPPs) in metal is described for each step – from the generation of carriers to their extraction from the metal. The relative importance of various carrier-generating mechanisms is discussed. It is shown that both the generation of carriers and their decay are inherently quantum processes as, for realistic illumination conditions, no more than a single SPP per nanoparticle exists at a given time. As a result, the distribution of non-equilibrium carriers cannot be described by a single temperature. It is also shown that the originally excited carriers that have not undergone a single electron-electron scattering event are practically the only ones that contribute to the injection. The role of momentum conservation in carrier extraction is discussed, and it is shown that, if all the momentum conservation rules are relaxed, it is the density of states in the semiconductor/dielectric that determines the ultimate injection efficiency. A set of recommendations aimed at improving the efficiency of plasmonic-assisted photodetection and (to a lesser degree) photocatalysis is made in the end.

Analysis of Hot Carrier Injection According to Gate Length

2019 ◽  
Vol 19 (10) ◽  
pp. 6746-6749 ◽  
Author(s):  
Taejin Jang ◽  
Myung-Hyun Baek ◽  
Min-Woo Kwon ◽  
Sungmin Hwang ◽  
Jeesoo Chang ◽  
...  
Keyword(s):  
Gate Length ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection
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