A new a-Si:H TFT pixel circuit compensating the threshold voltage shift of a-Si:H TFT and OLED for active matrix OLED

2005 ◽  
Vol 26 (12) ◽  
pp. 897-899 ◽  
Author(s):  
Jae-Hoon Lee ◽  
Ji-Hoon Kim ◽  
Min-Koo Han
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Active Matrix ◽  
Pixel Circuit

scholarly journals LTPS-TFT Pixel Circuit Compensating for TFT Threshold Voltage Shift and IR-Drop on the Power Line for AMOLED Displays

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Ching-Lin Fan ◽  
Min-Chi Shang ◽  
Wei-Chun Lin ◽  
Hsiu-Chen Chang ◽  
Kuang-Chi Chao ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Power Line ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Ir Drop ◽  
Pixel Circuit

Threshold Voltage Shift Variation of a-Si:H TFTs With Anneal Time

2010 ◽  
Vol 1245 ◽  
Author(s):  
Anil Indluru ◽  
Sameer M Venugopal ◽  
David R Allee ◽  
Terry L Alford
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Liquid Crystal Display ◽  
Electrical Performance ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Active Matrix ◽  
Improved Performance ◽  
Anneal Time

AbstractHydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used in many areas and the most important application is in active matrix liquid crystal display. However, the instability of the a-Si:H TFTs constrains their usability. These TFTs have been annealed at higher temperatures in hope of improving their electrical performance. But, higher anneal temperatures become a constraint when the TFTs are grown on polymer-based flexible substrates. This study investigates the effect of anneal time on the performance of the a-Si:H TFTs on PEN. Thin-film transistors are annealed at different anneal times (4 h, 24 h, and 48 h) and were stressed under different bias conditions. Sub-threshold slope and the off-current improved with anneal time. Off-current was reduced by two orders of magnitude for 48 hours annealed TFT and sub-threshold slope became steeper with longer annealing. At positive gate-bias-stress (20 V), threshold voltage shift (∆Vt) values are positive and exhibit a power-law time dependence. High temperature measurements indicate that longer annealed TFTs show improved performance and stability compared to unannealed TFTs. This improvement is due to reduction of interface trap density and good a-Si:H/insulator interface quality with anneal time.

46.2: New OLED Pixel Circuit and Driving Method to Suppress Threshold Voltage Shift of a-Si:H TFT

2006 ◽  
Vol 37 (1) ◽  
pp. 1547 ◽  
Author(s):  
Taro Hasumi ◽  
Shinji Takasugi ◽  
Keigo Kanoh ◽  
Yoshinao Kobayashi
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Pixel Circuit

An AC Driving Pixel Circuit Compensating for TFTs Threshold-Voltage Shift and OLED Degradation for AMOLED

2013 ◽  
Vol 9 (7) ◽  
pp. 572-576 ◽  
Author(s):  
Wei-Jing Wu ◽  
Lei Zhou ◽  
Miao Xu ◽  
Li-Rong Zhang ◽  
Ruo-He Yao ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Pixel Circuit

A Driving Method of Pixel Circuit Using a-IGZO TFT for Suppression of Threshold Voltage Shift in AMLED Displays

2017 ◽  
Vol 38 (6) ◽  
pp. 760-762 ◽  
Author(s):  
Woo-Sul Shin ◽  
Hyun-A Ahn ◽  
Jun-Seok Na ◽  
Seong-Kwan Hong ◽  
Oh-Kyong Kwon ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Pixel Circuit ◽  
Igzo Tft

New Pixel Circuit Compensating Poly-si TFT Threshold-voltage Shift for Driving AMOLED

2010 ◽  
Vol 56 (4) ◽  
pp. 1185-1189 ◽  
Author(s):  
Ching-Lin Fan ◽  
Y. Y. Lin ◽  
B. S. Lin ◽  
J. Y. Chang ◽  
C. L. Fan ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Pixel Circuit
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