Mobility variation and threshold voltage shift immunized amorphous-indium-gallium-zinc-oxide pixel circuit

2016 ◽  
Author(s):  
Zhiqiang Liao ◽  
Hesheng Lin ◽  
Binjie Liu ◽  
Min Zhang
Keyword(s):  
Zinc Oxide ◽  
Threshold Voltage ◽  
Indium Gallium Zinc Oxide ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Pixel Circuit ◽  
Indium Gallium

scholarly journals LTPS-TFT Pixel Circuit Compensating for TFT Threshold Voltage Shift and IR-Drop on the Power Line for AMOLED Displays

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Ching-Lin Fan ◽  
Min-Chi Shang ◽  
Wei-Chun Lin ◽  
Hsiu-Chen Chang ◽  
Kuang-Chi Chao ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Power Line ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Ir Drop ◽  
Pixel Circuit

Solution-Based Indium–Zinc Oxide/Indium–Gallium–Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide

2020 ◽  
Vol 20 (11) ◽  
pp. 6643-6647
Author(s):  
Woojin Jeon ◽  
Pyungho Choi ◽  
Areum Park ◽  
Donghyeon Lee ◽  
Donghee Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Peroxide ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Indium Gallium Zinc Oxide ◽  
Threshold Voltage Shift ◽  
Indium Zinc Oxide ◽  
Indium Gallium ◽  
Improved Performance ◽  
Double Channel

We fabricated and evaluated solution-based double-channel thin-film transistors (TFTs) that consisted of an indium–zinc oxide (IZO) front layer and an indium–gallium–zinc oxide (IGZO) back channel with the addition of hydrogen peroxide (H2O2). The devices showed superior electrical properties with regard to saturation mobility (12.9 cm2/V·s), the on-off ratio (5 × 107), and the subthreshold swing (0.21 V/decade). All the devices were subjected under bias and illumination stress for reliability assessment. The threshold voltage shift stability of positive and negative bias illumination stress under different wavelengths was also enhanced. Thus, we achieved improved performance using IZO/IGZO TFTs with back channels that incorporated H2O2.

9.3: Control of Threshold Voltage in Back Channel Etch Type Amorphous Indium Gallium Zinc Oxide Thin Film Transistors

2011 ◽  
Vol 42 (1) ◽  
pp. 104-106 ◽  
Author(s):  
Seung Min Lee ◽  
Chang Il Ryoo ◽  
Jae Wook Park ◽  
Joonsoo Han ◽  
Dae-Won Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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