scholarly journals Performance comparison between carbon nanotube and copper interconnects for gigascale integration (GSI)

2005 ◽  
Vol 26 (2) ◽  
pp. 84-86 ◽  
Author(s):  
A. Naeemi ◽  
R. Sarvari ◽  
J.D. Meindl
Keyword(s):  
Carbon Nanotube ◽  
Performance Comparison ◽  
Copper Interconnects ◽  
Gigascale Integration

Performance Comparison of Interdigitated Thin-Film Field-Effect Transistors Using Different Purity Semiconducting Carbon Nanotubes

2011 ◽  
Vol 181-182 ◽  
pp. 343-348
Author(s):  
K.C. Narasimhamurthy ◽  
Roy Paily Palathinkal
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Hafnium Oxide ◽  
Field Effect ◽  
Dielectric Material ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Channel Length ◽  
Performance Comparison ◽  
Saturation Region

In this paper, we present the fabrication and characterization of semiconducting carbon nanotube thin-film field-effect transistors (SN-TFTs). High-k dielectric material, hafnium-oxide (HfOX) is used as the gate-oxide of the device. A Thin-film of semi-conducting single walled carbon nanotube (SWCNT) is deposited on the amino-silane modified HfOX surface. Two types of SN-TFTs with interdigitated source and drain contacts are fabricated using 90% and 95% purity of semiconducting SWCNTs (s-SWCNT), have exhibited a p-type behavior with a distinct linear and saturation region of operation. For 20 µm channel length SN-TFT with 95% pure s-SWCNTs has a peak on-off current ratio of 3.5×104 and exhibited a transconductance of 950 µS. The SN-TFT fabricated with HfOX gate oxide has shown a steep sub-threshold slope of 750 mV/decade and threshold voltage of -0.7 V. The SN-TFT of channel length 50 µm has exhibited a maximum mobility of 26.9 cm2/V•s.

Performance Comparison Between Metallic Carbon Nanotube and Copper Nano-Interconnects

2008 ◽  
Vol 31 (4) ◽  
pp. 692-699 ◽  
Author(s):  
Antonio Maffucci ◽  
Giovanni Miano ◽  
Fabio Villone
Keyword(s):  
Carbon Nanotube ◽  
Performance Comparison

Performance Analysis of Mixed-Wall CNT Interconnects Using Colliding Bodies Optimization Technique

2020 ◽  
pp. 189-211
Author(s):  
Girish Kumar Mekala ◽  
Yash Agrawal ◽  
Rajeevan Chandel ◽  
Ashwani Kumar
Keyword(s):  
Carbon Nanotube ◽  
Performance Analysis ◽  
Power Dissipation ◽  
Optimization Technique ◽  
Copper Interconnects ◽  
Crosstalk Noise ◽  
Colliding Bodies Optimization ◽  
Potential Alternative ◽  
On Chip ◽  
Tube Density

In recent years, carbon nanotube (CNT) interconnects have emerged as a potential alternative to copper interconnects due to their several magnificent properties. Due to fabrication issues, realization of densely packed CNTs with uniform diameters in a bundle structure is difficult to achieve. Consequently, it is advantageous to obtain a combination of CNTs with non-uniform diameters in the bundle, thereby leading to a densely packed mixed-wall CNT bundle (MWCB). In a MWCB structure, tube density plays a major role to determine the parasitic elements associated with the interconnects. For this, prospectively, colliding bodies optimization (CBO) technique has been incorporated. It is inferred from the study that the overall crosstalk noise, delay, and power dissipation of MWCB interconnect with higher tube density (i.e., obtained using CBO technique) are lesser than other CNT structures. Henceforth, it is determined from the proposed work that prospective CBO technique for advanced MWCB structure is highly efficient and effective for on-chip interconnects in IC designs.

Performance Comparison of Carbon Nanotube, Graphene Nano Ribon and Silicon Nanowire Transistors

2013 ◽  
Vol 4 (1) ◽  
pp. 1-10
Author(s):  
S. B. Siddique ◽  
◽  
T. M. Faruqi ◽  
B.C. Sarkar ◽  
Mahmudul Hasan ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Silicon Nanowire ◽  
Performance Comparison ◽  
Nanowire Transistors

Performance Comparison Between Current-Mode Signaling and Voltage-Mode Signaling for Single-Walled Carbon Nanotube Bundle Interconnects

2018 ◽  
Vol 27 (11) ◽  
pp. 1850173 ◽  
Author(s):  
Songjie Zhao ◽  
Zhongliang Pan
Keyword(s):  
Carbon Nanotube ◽  
Equivalent Circuit Model ◽  
Current Mode ◽  
Propagation Delay ◽  
Performance Comparison ◽  
Design System ◽  
Matrix Approach ◽  
Voltage Mode ◽  
Parameter Matrix ◽  
Voltage Swing

Compared with the traditional copper material, carbon nanotube (CNT) has been identified as one of the most potential materials for interconnects in nanometer regime due to higher performance. However, for CNT interconnects, most of the researches focus on voltage-mode signaling (VMS) scheme, whereas current-mode signaling scheme (CMS) is meagerly investigated. The paper proposes an equivalent circuit model of two-line coupled single-walled CNT bundle interconnects, which is applicable to both CMS and VMS schemes. In addition, the model takes capacitive and inductive crosstalk into consideration. In CMS and VMS interconnects, the performance of victim line in the time domain is studied according to decoupling technique and ABCD parameter matrix approach at local, intermediate and global levels, respectively. The influence of aggressor line on victim line is discussed because of dynamic crosstalk and functional crosstalk. Furthermore, the paper comparatively analyzes the performance advantage between CMS interconnects and VMS interconnects. The results show that CMS interconnects have lower output voltage swing and propagation delay than VMS interconnects in the same condition. In terms of noise, CMS scheme has higher advantage for lesser noise peak, noise width and noise area. Moreover, it is found that the results obtained by ABCD parameter matrix approach have great consistency with Advanced Design System simulation results.

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