Suppression of the Floating-Body Effect in Poly-Si Thin-Film Transistors With Self-Aligned Schottky Barrier Source and Ohmic Body Contact Structure

2004 ◽  
Vol 25 (9) ◽  
pp. 634-636 ◽  
Author(s):  
P.-Y. Kuo ◽  
T.-S. Chao ◽  
T.-F. Lei
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Thin Film Transistors ◽  
Contact Structure ◽  
Floating Body ◽  
Body Effect ◽  
Body Contact ◽  
Floating Body Effect ◽  
Si Thin Film

A Tunnel Diode Body Contact Structure to Suppress the Floating-Body Effect in Partially Depleted SOI MOSFETs

2011 ◽  
Vol 32 (10) ◽  
pp. 1346-1348 ◽  
Author(s):  
Jing Chen ◽  
Jiexin Luo ◽  
Qingqing Wu ◽  
Zhan Chai ◽  
Tao Yu ◽  
...  
Keyword(s):  
Contact Structure ◽  
Tunnel Diode ◽  
Floating Body ◽  
Body Effect ◽  
Body Contact ◽  
Floating Body Effect

Influence of Body Contact on the ESD Protection Performance in 0.35μm Partially-Depleted SOI Salicided CMOS Technology

2011 ◽  
Vol 383-390 ◽  
pp. 7025-7031
Author(s):  
Zhong Fang Wang ◽  
Cheng Min Xie ◽  
Hong Ju Yue ◽  
Long Sheng Wu ◽  
You Bao Liu
Keyword(s):  
Transmission Line ◽  
Pulse Generator ◽  
Cmos Technology ◽  
Floating Body ◽  
Body Effect ◽  
Body Contact ◽  
Floating Body Effect ◽  
Gate Structure ◽  
Esd Protection ◽  
Soi Technology

Although body contact can solve the problem of floating body effect in the partially-depleted (PD) SOI technology, it still has important influence on the ESD protection performance. In order to investigate the influence of body contact on the ESD protection performance, three different structures are fabricated in 0.35μm PD SOI salicided CMOS technology, they are stick gate structure with body floating, H gate structure with body contact located outside the edge gate, and body tied source (BTS)structure with body contact placed intermittently along the source diffusion. The transmission line pulse generator(TLPG) measured results of these three different structures are compared and analyzed, both the stick gate structure with body floating and BTS structure have a better robustness level than H gate structure with body contact.

Novel Band-to-Band Tunneling Body Contact (BTBC) Structure to Suppress the Floating- Body Effect in a Vertical-Cell DRAM

2018 ◽  
Vol 39 (12) ◽  
pp. 1860-1863 ◽  
Author(s):  
Youngseung Cho ◽  
Pyeongho Choi ◽  
Younghwan Hyeon ◽  
Junhwa Song ◽  
Yoosang Hwang ◽  
...  
Keyword(s):  
Floating Body ◽  
Body Effect ◽  
Body Contact ◽  
Floating Body Effect ◽  
Band To Band Tunneling ◽  
Vertical Cell

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Flexible Single-Crystalline Ge p-Channel Thin-Film Transistors With Schottky-Barrier Source/Drain on Polyimide Substrates

2010 ◽  
Vol 31 (5) ◽  
pp. 422-424 ◽  
Author(s):  
William Hsu ◽  
Cheng-Yi Peng ◽  
Cheng-Ming Lin ◽  
Yen-Yu Chen ◽  
Yen-Ting Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
Thin Film Transistors ◽  
Single Crystalline
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