Monte Carlo particle modeling of electron velocity overshoot effect in MSM photodiodes

2002 ◽  
Author(s):  
M. Ryzhii ◽  
M. Willander ◽  
I. Khmyrova ◽  
V. Ryzhii
Keyword(s):  
Monte Carlo ◽  
Electron Velocity ◽  
Velocity Overshoot ◽  
Particle Modeling

Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs

1999 ◽  
Vol 595 ◽  
Author(s):  
Maziar Farahmand ◽  
Kevin F. Brennan
Keyword(s):  
Monte Carlo ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Electron Velocity ◽  
Wurtzite Phase ◽  
Velocity Overshoot ◽  
Density Of Electronic States ◽  
Full Band ◽  
Self Consistent ◽  
Output Characteristics

AbstractThe output characteristics, cutoff frequency, breakdown voltage and the transconductance of wurtzite and zincblende phase GaN MESFETs have been calculated using a self-consistent, full band Monte Carlo simulation. It is found that the calculated breakdown voltage for the wurtzite device is considerably higher than that calculated for a comparable GaN zincblende phase device. The zincblende device is calculated to have a higher transconductance and cutoff frequency than the wurtzite device. The higher breakdown voltage of the wurtzite phase device is attributed to the higher density of electronic states for this phase compared to the zincblende phase. The higher cutoff frequency and transconductance of the zincblende phase GaN device is attributed to more appreciable electron velocity overshoot for this phase compared to that for the wurtzite phase. The maximum cutoff frequency and transconductance of a 0.1 μm gate-length zincblende GaN MESFET are calculated to be 220GHz and 210 mS/mm, respectively. The corresponding quantities for the wurtzite GaN device are calculated to be 160GHz and 158 mS/mm.

scholarly journals Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs

2000 ◽  
Vol 5 (S1) ◽  
pp. 633-639
Author(s):  
Maziar Farahmand ◽  
Kevin F. Brennan
Keyword(s):  
Monte Carlo ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Electron Velocity ◽  
Wurtzite Phase ◽  
Velocity Overshoot ◽  
Density Of Electronic States ◽  
Full Band ◽  
Self Consistent ◽  
Output Characteristics

The output characteristics, cutoff frequency, breakdown voltage and the transconductance of wurtzite and zincblende phase GaN MESFETs have been calculated using a self-consistent, full band Monte Carlo simulation. It is found that the calculated breakdown voltage for the wurtzite device is considerably higher than that calculated for a comparable GaN zincblende phase device. The zincblende device is calculated to have a higher transconductance and cutoff frequency than the wurtzite device. The higher breakdown voltage of the wurtzite phase device is attributed to the higher density of electronic states for this phase compared to the zincblende phase. The higher cutoff frequency and transconductance of the zincblende phase GaN device is attributed to more appreciable electron velocity overshoot for this phase compared to that for the wurtzite phase. The maximum cutoff frequency and transconductance of a 0.1 μm gate-length zincblende GaN MESFET are calculated to be 220GHz and 210 mS/mm, respectively. The corresponding quantities for the wurtzite GaN device are calculated to be 160GHz and 158 mS/mm.

MONTE CARLO MODELING OF HOT ELECTRON TRANSPORT IN BULK AlAs, AlGaAs AND GaAs AT ROOM TEMPERATURE

2008 ◽  
Vol 22 (18) ◽  
pp. 1777-1784 ◽  
Author(s):  
H. ARABSHAHI ◽  
M. R. KHALVATI ◽  
M. REZAEE ROKN-ABADI
Keyword(s):  
Monte Carlo ◽  
Drift Velocity ◽  
Critical Field ◽  
Electron Drift Velocity ◽  
Electron Velocity ◽  
Electron Drift ◽  
Hot Electron ◽  
Velocity Overshoot ◽  
Transient Velocity ◽  
Hot Electron Transport

The results of an ensemble Monte Carlo simulation of electron drift velocity response on the application field in bulk AlAs , AlGaAs and GaAs are presented. All dominant scattering mechanisms in the structure considered have been taken into account. For all materials, it is found that electron velocity overshoot only occurs when the electric field is increased to a value above a certain critical field, unique to each material. This critical field is strongly dependent on the material parameters. Transient velocity overshoot has also been simulated, with the sudden application of fields up to 1600 kVm-1, appropriate to the gate-drain fields expected within an operational field effect transistor. The electron drift velocity relaxes to the saturation value of ~105 ms-1 within 4 ps, for all crystal structures. The steady state and transient velocity overshoot characteristics are in fair agreement with other recent calculations.

Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: a subpicosecond Raman probe

1998 ◽  
Author(s):  
Kong-Thon F. Tsen ◽  
David K. Ferry ◽  
Jyh-Shyang Wang ◽  
Chao-Hsiung Huang ◽  
Hao-Hsiung Lin
Keyword(s):  
Direct Observation ◽  
Electron Velocity ◽  
Velocity Overshoot ◽  
Raman Probe

Subpicosecond Raman Studies of Electron Velocity Overshoot in a GaAs-Based Nanostructure Semiconductor

1996 ◽  
pp. 501-504
Author(s):  
E. D. Grann ◽  
K. T. Tsen ◽  
D. K. Ferry ◽  
A. Salvador ◽  
A. Botcharev ◽  
...  
Keyword(s):  
Electron Velocity ◽  
Velocity Overshoot
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