Low-Noise and Wide-Dynamic-Range ROIC With a Self-Selected Capacitor for SWIR Focal Plane Arrays

2017 ◽  
Vol 17 (1) ◽  
pp. 179-184 ◽  
Author(s):  
Yeong Seon Kim ◽  
Doo Hyung Woo ◽  
Young Min Jo ◽  
Sang Gu Kang ◽  
Hee Chul Lee
Keyword(s):  
Focal Plane ◽  
Dynamic Range ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Wide Dynamic Range

A Low-Noise, Low-Power, Wide Dynamic Range Logarithmic Amplifier for Biomedical Applications

2018 ◽  
Vol 27 (07) ◽  
pp. 1850104 ◽  
Author(s):  
Yuwadee Sundarasaradula ◽  
Apinunt Thanachayanont
Keyword(s):  
Low Power ◽  
Biomedical Applications ◽  
Dynamic Range ◽  
Supply Voltage ◽  
Low Noise ◽  
Power Supply Voltage ◽  
Wide Dynamic Range ◽  
Dc Offset ◽  
Limiting Amplifier ◽  
Logarithmic Amplifier

This paper presents the design and realization of a low-noise, low-power, wide dynamic range CMOS logarithmic amplifier for biomedical applications. The proposed amplifier is based on the true piecewise linear function by using progressive-compression parallel-summation architecture. A DC offset cancellation feedback loop is used to prevent output saturation and deteriorated input sensitivity from inherent DC offset voltages. The proposed logarithmic amplifier was designed and fabricated in a standard 0.18[Formula: see text][Formula: see text]m CMOS technology. The prototype chip includes six limiting amplifier stages and an on-chip bias generator, occupying a die area of 0.027[Formula: see text]mm2. The overall circuit consumes 9.75[Formula: see text][Formula: see text]W from a single 1.5[Formula: see text]V power supply voltage. Measured results showed that the prototype logarithmic amplifier exhibited an 80[Formula: see text]dB input dynamic range (from 10[Formula: see text][Formula: see text]V to 100[Formula: see text]mV), a bandwidth of 4[Formula: see text]Hz–10[Formula: see text]kHz, and a total input-referred noise of 5.52[Formula: see text][Formula: see text]V.

A Low-Noise CTIA-based pixel with CDS for SWIR Focal Plane Arrays

2021 ◽  
Author(s):  
Yi Zhuo ◽  
Wengao Lu ◽  
Shanzhe Yu ◽  
Ye Zhou ◽  
Jiaqi Kong ◽  
...  
Keyword(s):  
Focal Plane ◽  
Low Noise ◽  
Focal Plane Arrays

Low-noise readout circuit for SWIR focal plane arrays

2017 ◽  
Author(s):  
Oguz Altun ◽  
Ferhat Tasdemir ◽  
Omer Lutfi Nuzumlali ◽  
Reha Kepenek ◽  
Ercihan Inceturkmen ◽  
...  
Keyword(s):  
Focal Plane ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Readout Circuit

A low-noise wide-dynamic-range event-driven detector using SOI pixel technology for high-energy particle imaging

2015 ◽  
Author(s):  
Sumeet Shrestha ◽  
Hiroki Kamehama ◽  
Shoji Kawahito ◽  
Keita Yasutomi ◽  
Keiichiro Kagawa ◽  
...  
Keyword(s):  
Dynamic Range ◽  
High Energy ◽  
Low Noise ◽  
High Energy Particle ◽  
Energy Particle ◽  
Wide Dynamic Range ◽  
Event Driven ◽  
Particle Imaging

scholarly journals Monolithic CMOS sensor platform featuring an array of 9’216 carbon-nanotube-sensor elements and low-noise, wide-bandwidth and wide-dynamic-range readout circuitry

2019 ◽  
Vol 279 ◽  
pp. 255-266 ◽  
Author(s):  
Alexandra Dudina ◽  
Florent Seichepine ◽  
Yihui Chen ◽  
Alexander Stettler ◽  
Andreas Hierlemann ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Dynamic Range ◽  
Low Noise ◽  
Wide Dynamic Range ◽  
Wide Bandwidth ◽  
Sensor Platform ◽  
Cmos Sensor

Demonstration of Fabricated Midwave Infrared InAs/GaSb Type-II Superlattice-based Focal Plane Arrays

2017 ◽  
Vol 67 (2) ◽  
pp. 149 ◽  
Author(s):  
K.C. Goma Kumari ◽  
H.M. Rawool ◽  
S. Chakrabarti
Keyword(s):  
Low Temperature ◽  
Focal Plane ◽  
Spectral Response ◽  
Low Noise ◽  
Focal Plane Arrays ◽  
Type Ii ◽  
Type Ii Superlattice ◽  
Pixel Detectors ◽  
Midwave Infrared ◽  
Single Pixel

In this study, fabricated 320 × 256 infrared focal plane arrays (FPAs) were realised using a GaSb/InAs-based type-II superlattice heterostructure for midwave infrared (MWIR) imaging. We report here the optimized fabrication and characterization of single-pixel infrared detectors and FPAs. MWIR spectral response up to 5 μm of these single-pixel detectors was evident up to 250 K. Responsivity was measured to be 1.62 A/W at 0.8 V and 80 K. Current–voltage characteristics at room temperature (300 K) and at low temperature (18 K) revealed the resistance and dark current variation of the device in the operating bias region. Moreover, good thermal images were obtained at device temperatures up to 150 K for low-temperature targets. Low noise equivalent difference in temperature was measured to be 58 mK at 50 K and 117 mK at 120 K.

Low-noise InGaAs infrared 1.0- to 2.4-μm focal plane arrays for SCIAMACHY

1997 ◽  
Author(s):  
Ronald J. van der A ◽  
Ruud W. M. Hoogeveen ◽  
Hugo J. Spruijt ◽  
Albert P. H. Goede
Keyword(s):  
Focal Plane ◽  
Low Noise ◽  
Focal Plane Arrays
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