Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications

2007 ◽  
Vol 95 (9) ◽  
pp. 1866-1883 ◽  
Author(s):  
Kang L. Wang ◽  
Dongho Cha ◽  
Jianlin Liu ◽  
Christopher Chen
Keyword(s):  
Quantum Dots ◽  
Optoelectronic Device ◽  
Device Applications ◽  
Self Assembled

InAs Quantum Dots for Optoelectronic Device Applications

2004 ◽  
Vol 829 ◽  
Author(s):  
K. Stewart ◽  
S. Barik ◽  
M. Buda ◽  
H. H. Tan ◽  
C. Jagadish
Keyword(s):  
Quantum Dots ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Organic Chemical ◽  
Group V ◽  
Inas Quantum Dots ◽  
Group Iii ◽  
Device Applications ◽  
Metal Organic

ABSTRACTIn this paper we discuss the growth of self-assembled InAs quantum dots (QDs) on both GaAs and InP substrates by low pressure Metal Organic Chemical Vapor Deposition. The influence of various growth parameters, such as the deposition time, the QD overlayer growth temperature, the V/III ratio and the group III and/or group V interdiffusion on QD formation are discussed and compared for the two systems. Stacking issues and preliminary results for an InAs/GaAs QD laser are also presented.

scholarly journals Atomic Ordering in Self-assembled Epitaxial and Endotaxial Compound and Element Semiconductor Quantum Dot Structures: The First Review

2003 ◽  
Vol 776 ◽  
Author(s):  
Peter Möck
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Information Storage ◽  
Atomic Ordering ◽  
Transmission Electron ◽  
Device Applications ◽  
Random Alloy ◽  
Self Assembled ◽  
Electron Microscopical ◽  
Alloy Quantum Dots

AbstractAlthough the main international research thrust on self-assembled epitaxial semiconductor quantum dots is currently being directed towards random alloy quantum dots, the suggestion is made that atomically ordered quantum dots which are grown by either epitaxy or endotaxy may in addition to their larger quantum confinement potentials possess superior long term structural stability. Such atomically ordered quantum dots should, therefore, be superior to random alloy quantum dots as far as prospective device applications are concerned. The basis for this suggestion is simple thermodynamic considerations. These considerations seem to explain our transmission electron microscopical observations of epitaxially grown atomically ordered In(Sb,As), (In,Ga)Sb, (Cd,Zn)Se, (Cd,Mn,Zn)Se quantum dots and Pb(Se,Te) quantum dot predecessor islands. Atomic ordering in (In,Ga)P quantum dot structures, as recently observed by other authors, does not seem to contradict our thermodynamic considerations. Endotaxially grown atomically ordered (In,Si,As) and (Sn,Si) quantum dots in Si matrices are briefly discussed as an even more unconventional approach to nanostructures with applications in electronics, photonics, information storage, and sensing.

Linear and nonlinear optical characteristics of all-inorganic perovskite CsPbBr3 quantum dots modified by hydrophobic zeolites

Nanoscale ◽  
2018 ◽  
Vol 10 (48) ◽  
pp. 22766-22774 ◽  
Author(s):  
Ruxue Li ◽  
Zhipeng Wei ◽  
Haixia Zhao ◽  
Hongrui Yu ◽  
Xuan Fang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Nonlinear Optical ◽  
Optoelectronic Device ◽  
Optical Characteristics ◽  
Inorganic Perovskite ◽  
Perovskite Quantum Dots ◽  
Device Applications ◽  
Linear And Nonlinear ◽  
Cspbbr3 Quantum Dots

All-inorganic perovskite quantum dots (QDs) have been considered as outstanding candidates for high-performance optoelectronic device applications.

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