RF de-embedding technique for extracting power MOSFET package parasitics

2002 ◽  
Author(s):  
E. McShane ◽  
K. Shenai
Keyword(s):  
Power Mosfet ◽  
Embedding Technique

Visualization of the Platelet-Plasma Interface

1977 ◽  
Vol 35 ◽  
pp. 494-495
Author(s):  
D. C. Brindley ◽  
M. McGill
Keyword(s):  
Platelet Rich Plasma ◽  
Coagulation Factors ◽  
Platelet Membrane ◽  
Rabbit Platelet ◽  
Surface Coat ◽  
Special Relationship ◽  
Routine Method ◽  
Embedding Technique ◽  
Biochemical Analyses ◽  
Adsorptive Properties

Morphological and cytochemical studies of platelets have reported a surface coat, or glycocalyx, external to the plasma membrane (1). Biochemical analyses have likewise confirmed the highly adsorptive properties of platelets as transporters of coagulation factors (2). However, visualization of the platelet membrane by conventional EM procedures does not reflect this special relationship between the platelet and its plasma environment. By the routine method of alcohol-propylene oxide dehydration for Epon embedding, the lipid bilayer nature of the platelet membrane appears similar to other blood cells (Fig. 1). A new rapid embedding technique using dimethoxypropane (DMP) as dehydrating agent (13) has permitted ultrastructural analyses of the surface features of the platelet-plasma interface.Aliquots of human or rabbit platelet-rich plasma (PRP) were added to equal volumes of 6% glutaraldehyde in Millonig's buffer at 37° for 45 minutes, rinsed in buffer and postfixed in 1% osmium in Millonig's buffer for 45 minutes.

Flat embeddment of monolayer cells, tissue sections, and other cellular materials attached onto glass substrate

1990 ◽  
Vol 48 (3) ◽  
pp. 766-767
Author(s):  
Jeffrey P. Chang ◽  
Jaang J. Wang
Keyword(s):  
Present Report ◽  
Cellular Materials ◽  
Cover Glass ◽  
Tissue Sections ◽  
Embedding Technique ◽  
Exfoliated Cells ◽  
Black Paper ◽  
Cell Concentrations ◽  
Flat Embedding

Flat embeddment of certain specimens for electron microscopy is necessary for three classes of biological materials: namely monolayer cells, tissue sections of paraffin or plastics, as well as cell concentrations, exfoliated cells, and cell smears. The present report concerns a flat-embedding technique which can be applied to all these three classes of materials and which is a modified and improved version of Chang's original methodology.Preparation of coverglasses and microslides. Chemically cleaned coverglasses, 11 × 22 mm or other sizes, are laid in rows on black paper. Ink-mark one coner for identifying the spray-side of the glass for growing cells. Lightly spray with Teflon monomer (Heddy/Contact Inductries, Paterson, NO 07524, U.S.A.) from a pressurized can. Bake the sprayed glasses at 500°F for 45 min on Cover-Glass Ceramic Racks (A. Thomas Co. Philadelphia), for Teflon to polymerize.Monolayer Cells. After sterilization, the Teflon-treated coverglasses, with cells attached, are treated or fixed in situ in Columbia staining dishes (A. Thomas Co., Philadelphia) for subsequent processing.

Involvement of nucleus in the maturation of dengue-2 virus in C6/36 cells

1990 ◽  
Vol 48 (3) ◽  
pp. 912-913
Author(s):  
Jaang J. Wang ◽  
Cheng C. Chen ◽  
Men F. Shaio ◽  
Chia T. Liu ◽  
Chung S. Lee ◽  
...  
Keyword(s):  
Culture Medium ◽  
Cytopathic Effect ◽  
Fetal Bovine Serum ◽  
Virus Particles ◽  
Electron Microscopies ◽  
Embedding Technique ◽  
Fetal Bovine ◽  
Flat Embedding ◽  
20 Nm ◽  
Labeling Method

The involvement of nucleus in the maturation processes of Dengue-2 virus in a mosquito cell line, C6/36 cells, has been identified by the electron microscopy and immunocytochemistry. The C6/36 cells were obtained from ATCC and maintained in MEM culture medium containing 10% fetal bovine serum at 28°C. The cell suspensions or cells grown on teflon-coated coverslips were infected with Dengue-2 virus (107/ml) for various time periods of 2 hours, 3, 6, 8, and 10 days. The cells were then fixed in buffered 1.5% glutaraldehyde, and washed in acetone before immunolabeled with monoclonal antibody. An indirect immunocytochemical labeling method of avidin-biotin complex (ABC) conjugated with peroxidase or gold particles (20 nm in diameter) and a flat embedding technique were used to localize the virus particles.At early stages of infections (before 3 days), there were no virion particles detected. After 6 days and on of infections, cytopathic effect (CPE) was observed and showed positive immuno-peroxidase reactions under the light and electron microscopies.

Carrier Redistribution Analysis of Gate-Biased SiC Power-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2015 ◽  
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho
Keyword(s):  
Cross Section ◽  
Measurement System ◽  
Higher Order ◽  
Depletion Layer ◽  
Gate Bias ◽  
Power Mosfet ◽  
Nonlinear Dielectric ◽  
Voltage Dependent ◽  
Carrier Redistribution ◽  
Source Voltage

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.

2D carrier Density Mapping Using SNDM-dC/dV and dC/dz of SiC Power MOSFET

2019 ◽  
Author(s):  
Jing-jiang Yu ◽  
T. Yamaoka ◽  
T. Aiso ◽  
K. Watanabe ◽  
Y. Shikakura ◽  
...  
Keyword(s):  
Carrier Density ◽  
Environmental Control ◽  
Boundary Region ◽  
Power Mosfet ◽  
Dopant Profiling ◽  
Density Mapping ◽  
Resolution Observation ◽  
Develop Software ◽  
20 Nm ◽  
High Resolution Observation

Abstract Scanning nonlinear dielectric microscopy is continuously developed as an AFM-derived method for 2D dopant profiling of semiconductor devices. In this paper, the authors apply 2D carrier density mapping to Si and SiC and succeed a high resolution observation of the SiC planar power MOSFET. Furthermore, they develop software that combines dC/dV and dC/dz images and expresses both density and polarity in a single distribution image. The discussion provides the details of AFM experiments that were conducted using a Hitachi environmental control AFM5300E system. The results indicated that the carrier density decreases in the boundary region between n plus source and p body. The authors conclude that although the resolutions of dC/dV and dC/dz are estimated to be 20 nm or less and 30 nm or less, respectively, there is a possibility that the resolution can be further improved by using a sharpened probe.

3D Integrated Power—A Discrete Perspective

2015 ◽  
Author(s):  
Ian Kearney ◽  
Stephen Brink
Keyword(s):  
Heat Dissipation ◽  
Automatic Test Equipment ◽  
Systematic Analysis ◽  
Power Mosfet ◽  
Root Cause ◽  
Industry Standard ◽  
Bona Fide ◽  
Process Issue ◽  
Board Level ◽  
3D Package

Abstract The shift in power conversion and power management applications to thick copper clip technologies and thinner silicon dies enable high-current connections (overcoming limitations of common wire bond) and enhance the heat dissipation properties of System-in-Package solutions. Powerstage innovation integrates enhanced gate drivers with two MOSFETs combining vertical current flow with a lateral power MOSFET. It provides a low on-resistance and requires an extremely low gate charge with industry-standard package outlines - a combination not previously possible with existing silicon platforms. These advancements in both silicon and 3D Multi-Chip- Module packaging complexity present multifaceted challenges to the failure analyst. The various height levels and assembly interfaces can be difficult to deprocess while maintaining all the critical evidence. Further complicating failure isolation within the system is the integration of multiple chips, which can lead to false positives. Most importantly, the discrete MOSFET all too often gets overlooked as just a simple threeterminal device leading to incorrect deductions in determining true root cause. This paper presents the discrete power MOSFET perspective amidst the competing forces of the system-to-board-level failure analysis. It underlines the requirement for diligent analysis at every step and the importance as an analyst to contest the conflicting assumptions of challenging customers. Automatic Test Equipment (ATE) data-logs reported elevated power MOSFET leakage. Initial assumptions believed a MOSFET silicon process issue existed. Through methodical anamnesis and systematic analysis, the true failure was correctly isolated and the power MOSFET vindicated. The authors emphasize the importance of investigating all available evidence, from a macro to micro 3D package perspective, to achieve the bona fide path forward and true root cause.

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