scholarly journals Soft sphere model for electron correlation and scattering in the atomistic modelling of semiconductor devices

Author(s):  
J.R. Watling ◽  
J.R. Barker ◽  
A. Asenov
VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 441-446
Author(s):  
J. R. Watling ◽  
J. R. Barker ◽  
A. Asenov

As MOSFET devices within the deep sub-micron regime are modelled, it is no longer feasible to represent the charged dopants by a continuous charge distribution. In this regime an ensemble of devices, each with different spatial distributions and the number of dopants, must be modelled. However, it is computationally prohibitive to solve for the full Coulomb interaction required for particle simulators, especially for an ensemble of devices. To address this point, the paper focuses on the issue of modelling the dynamics in the presence of discrete carrier–carrier scattering and carrier-fixed impurity scattering which is suitable for efficient simulations of large ensembles of devices.


2011 ◽  
Vol 109 (1) ◽  
pp. 123-132 ◽  
Author(s):  
Tai Boon Tan ◽  
Andrew J. Schultz ◽  
David A. Kofke

2014 ◽  
Vol 750 ◽  
Author(s):  
Aman G. Kidanemariam ◽  
Markus Uhlmann

AbstractWe present results of direct numerical simulation of incompressible fluid flow over a thick bed of mobile spherically shaped particles. The algorithm is based upon the immersed-boundary technique for fluid–solid coupling and uses a soft-sphere model for the solid–solid contact. Two parameter points in the laminar flow regime are chosen, leading to the emergence of sediment patterns classified as ‘small dunes’, while one case under turbulent flow conditions leads to ‘vortex dunes’ with significant flow separation on the lee side. The wavelength, amplitude and propagation speed of the patterns extracted from the spanwise-averaged fluid–bed interface are found to be consistent with available experimental data. The particle transport rates are well represented by available empirical models for flow over a plane sediment bed in both the laminar and the turbulent regimes.


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