scholarly journals A Generalized Soft-Sphere Model for Monte Carlo Simulation

2003 ◽  
Author(s):  
Jing Fan
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Sphere Model ◽  
Soft Sphere

scholarly journals Monte Carlo Simulation of the Formation of Snowflakes

2005 ◽  
Vol 62 (5) ◽  
pp. 1529-1544 ◽  
Author(s):  
Ken-ichi Maruyama ◽  
Yasushi Fujiyoshi
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Standard Deviation ◽  
Cross Section ◽  
Collision Cross Section ◽  
Initial Distribution ◽  
Sphere Model ◽  
Aggregate Model ◽  
Mean Diameter ◽  
The Mean

Abstract A stochastic microphysical model of snow aggregation that combines a simple aggregation model with a Monte Carlo method was developed. Explicit treatment of the shape of individual snowflakes in the new model facilitates examination of the structure of snowflakes and the relationships between the parameters of the generated snowflakes, such as mass versus diameter, in addition to comparisons with observations. In this study, complexities in the shape of snowflakes are successfully simulated, and the understanding of the evolution of their size distribution is advanced. The mean diameter of snow particles evolves more rapidly in the aggregate model than in the sphere model. However, growth rates of the aggregates greatly depend on the collision section of particles in aggregation. The mean mass of snowflakes in the aggregate model grows more slowly than the mass in the sphere model when the sum of the particle cross section is used as the collision cross section. The mean mass grows more quickly when a circle is used whose radius is the sum of the radii of two particles. Sensitivity experiments showed that aggregation also depends on the mean and standard deviation of the initial distribution, and on the density of constituent particles.

On a modified Monte-Carlo method and variable soft sphere model for rarefied binary gas mixture flow simulation

2011 ◽  
Vol 25 (5) ◽  
pp. 271-285
Author(s):  
S.S. Nourazar ◽  
P. Jahangiri ◽  
A. Aboutalebi ◽  
A.A. Ganjaei ◽  
M. Nourazar ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Method ◽  
Flow Simulation ◽  
Gas Mixture ◽  
Sphere Model ◽  
Mixture Flow ◽  
Soft Sphere ◽  
Binary Gas Mixture

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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