A 10 ns read and write non-volatile memory array using a magnetic tunnel junction and FET switch in each cell

2000 IEEE International Solid-State Circuits Conference Digest of Technical Papers ◽

10.1109/isscc.2000.839717 ◽

2002 ◽

Cited By ~ 30

Author(s):

R. Scheuerlein ◽

W. Gallagher ◽

S. Parkin ◽

A. Lee ◽

S. Ray ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Memory Array ◽

Non Volatile Memory ◽

Volatile Memory

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Challenges for non-volatile memory & logic manufacturing utilizing magnetic tunnel junction on 300 mm wafer

Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI - GLSVLSI '11 ◽

10.1145/1973009.1973107 ◽

2011 ◽

Author(s):

Keizo Kinoshita

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Non Volatile Memory ◽

Volatile Memory

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The write deduplication mechanism based on a novel low-power data latched sense amplifier for a magnetic tunnel junction based non-volatile memory

2017 IEEE 12th International Conference on ASIC (ASICON) ◽

10.1109/asicon.2017.8252493 ◽

2017 ◽

Author(s):

Baofa Huang ◽

Ningyuan Yin ◽

Zhiyi Yu

Keyword(s):

Low Power ◽

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Sense Amplifier ◽

Non Volatile Memory ◽

Volatile Memory

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Magneto-electric magnetic tunnel junction as process adder for non-volatile memory applications

2015 IEEE Dallas Circuits and Systems Conference (DCAS) ◽

10.1109/dcas.2015.7356588 ◽

2015 ◽

Cited By ~ 10

Author(s):

Nishtha Sharma ◽

Andrew Marshall ◽

Jonathan Bird ◽

Peter Dowben

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Non Volatile Memory ◽

Volatile Memory ◽

Memory Applications

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Four-state non-volatile memory in a multiferroic spin filter tunnel junction

Applied Physics Letters ◽

10.1063/1.4972786 ◽

2016 ◽

Vol 109 (25) ◽

pp. 252903 ◽

Cited By ~ 11

Author(s):

Jieji Ruan ◽

Chen Li ◽

Zhoushen Yuan ◽

Peng Wang ◽

Aidong Li ◽

...

Keyword(s):

Tunnel Junction ◽

Spin Filter ◽

Non Volatile Memory ◽

Volatile Memory

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Characterization of a MEMS-Based Embedded Non Volatile Memory Array for Extreme Environments

2011 3rd IEEE International Memory Workshop (IMW) ◽

10.1109/imw.2011.5873214 ◽

2011 ◽

Cited By ~ 3

Author(s):

Cristian Zambelli ◽

Piero Olivo ◽

Roberto Gaddi ◽

Cor Schepens ◽

Charles Smith

Keyword(s):

Extreme Environments ◽

Memory Array ◽

Non Volatile Memory ◽

Volatile Memory

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Non-Volatile Memory Array Based Quantization- and Noise-Resilient LSTM Neural Networks

2019 IEEE International Conference on Rebooting Computing (ICRC) ◽

10.1109/icrc.2019.8914713 ◽

2019 ◽

Author(s):

Wen Ma ◽

Pi-Feng Chiu ◽

Won Ho Choi ◽

Minghai Qin ◽

Daniel Bedau ◽

...

Keyword(s):

Neural Networks ◽

Memory Array ◽

Non Volatile Memory ◽

Volatile Memory

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A GIDL free tunneling gate driver for a low power non-volatile memory array

2012 IEEE International Symposium on Circuits and Systems ◽

10.1109/iscas.2012.6272062 ◽

2012 ◽

Cited By ~ 1

Author(s):

Hadar Dagan ◽

Adam Teman ◽

Alexander Fish ◽

Evgeny Pikhay ◽

Vladislav Dayan ◽

...

Keyword(s):

Low Power ◽

Memory Array ◽

Non Volatile Memory ◽

Gate Driver ◽

Volatile Memory

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Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ed13 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04ED13 ◽

Cited By ~ 5

Author(s):

Hiroki Koike ◽

Takashi Ohsawa ◽

Sadahiko Miura ◽

Hiroaki Honjo ◽

Shoji Ikeda ◽

...

Keyword(s):

Tunnel Junction ◽

Magnetic Tunnel Junction ◽

Spin Transfer Torque ◽

Spin Transfer ◽

Memory Array ◽

Junction Type

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A non-volatile memory array based on nano-ionic Conductive Bridge Memristors

2011 IEEE Workshop on Microelectronics and Electron Devices ◽

10.1109/wmed.2011.5767279 ◽

2011 ◽

Cited By ~ 3

Author(s):

Steve Wald ◽

Jake Baker ◽

Maria Mitkova ◽

Nader Rafla

Keyword(s):

Memory Array ◽

Non Volatile Memory ◽

Conductive Bridge ◽

Volatile Memory

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Ion beam effect on Ge-Se chalcogenide glass films: Non-volatile memory array formation, structural changes and device performance

2014 IEEE Workshop On Microelectronics And Electron Devices (WMED) ◽

10.1109/wmed.2014.6818720 ◽

2014 ◽

Cited By ~ 2

Author(s):

M. R. Latif ◽

T. L. Nichol ◽

M. Mitkova ◽

D. A. Tenne ◽

I. Csarnovics ◽

...

Keyword(s):

Chalcogenide Glass ◽

Structural Changes ◽

Ion Beam ◽

Device Performance ◽

Memory Array ◽

Non Volatile Memory ◽

Volatile Memory ◽

Glass Films

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