Contributions to dedicated gate driver circuitry for very high switching speed high temperature power devices

2016 ◽  
Author(s):  
Van-Sang Nguyen ◽  
Thanh-Long Le ◽  
Farshid Sarrafin ◽  
Ngoc-Duc To ◽  
Davy Colin ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Devices ◽  
Switching Speed ◽  
Gate Driver ◽  
High Switching Speed ◽  
Very High

First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

Effects of Very High Workfunction Metals or Metal Alloys (NiCr) on High Switching Speed, HV Schottky Diodes for Mixed Signal or RF ASIC

MRS Advances ◽  
2020 ◽  
Vol 5 (37-38) ◽  
pp. 1937-1946
Author(s):  
J. Pan ◽  
A. Gaibrois ◽  
M. Marripelly ◽  
J. Leung ◽  
S. Suko ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Metal Alloys ◽  
Forward Voltage ◽  
Switching Speed ◽  
External Bias ◽  
High Switching Speed ◽  
High Work ◽  
Very High

AbstractFor high switching speed HV Schottky diodes, with very high work function metal and extremely lightly doped epi, the built-in potential may be too high for thermionic emission to occur, when the applied external voltage is quite low (near VF = 0.07V). If the epi is lightly doped p type, the built-in potential (VBuilt-in: potential difference between the metal and silicon Fermi levels) is 1.0V (measured with CV). If the external bias is 0.1V, near the measured VF, it is not enough to overcome the built-in potential for thermionic emission as illustrated. It is likely that in addition to thermionic emission, tunnelling and diffusion currents also contribute to the total HV Schottky diode forward current. TCAD simulation of HV Schottky diodes with N+ guard bands suggests the potential barrier and electric fields at the Schottky junction are relatively high for thermionic emission to occur, when external bias V ≈ VF. In this paper we report HV Schottky diodes fabricated with various metals, metal alloys and epitaxial films. Metal work functions and epi doping profiles are extracted with high frequency Capacitance-Voltage (CV) technique. 150V of breakdown voltage and very low forward voltage (VF = 0.07V) are demonstrated. The measured data indicate very high work function metal or metal alloy is needed to achieve high switching speed and low forward voltage.

scholarly journals A Cascaded Gate Driver Architecture to Increase the Switching Speed of Power Devices in Series Connection

2020 ◽  
pp. 1-1 ◽  
Author(s):  
Luciano F. S. Alves ◽  
Van-Sang Nguyen ◽  
Pierre Lefranc ◽  
Jean-Christophe Crebier ◽  
Pierre-Olivier Jeannin ◽  
...  
Keyword(s):  
Power Devices ◽  
Switching Speed ◽  
Series Connection ◽  
In Series ◽  
Gate Driver

scholarly journals Design and Manufacturing of a Double-Side Cooled, SiC based, High Temperature Inverter Leg

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000372-000377 ◽  
Author(s):  
Raphaël RIVA ◽  
Cyril BUTTAY ◽  
Marie-Laure LOCATELLI ◽  
Vincent BLEY ◽  
Bruno ALLARD
Keyword(s):  
High Temperature ◽  
Dielectric Material ◽  
Heat Extraction ◽  
Power Devices ◽  
Power Module ◽  
Ceramic Substrates ◽  
Design And Manufacturing ◽  
Temperature Capability ◽  
Silver Sintering ◽  
Very High

In this paper, we present a small (25×25×3 mm3) power module that integrates two silicon-carbide (SiC) JFETs to form an inverter leg. This module has a “sandwich” structure, i.e. the power devices are placed between two ceramic substrates, allowing for heat extraction from both sides of the dies. All interconnects are made by silver sintering, which offers a very high temperature capability (the melting point of pure silver being 961 °C). The risk of silver migration is assessed, and we show that Parylene-HT, a dielectric material that can sustain more than 300 °C, can completely coat the module, providing adequate protection.

scholarly journals GaN Power Module with High Temperature Gate Driver and Insulated Power Supply

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000198-000205 ◽  
Author(s):  
Rémi Perrin ◽  
Dominique Bergogne ◽  
Christian Martin ◽  
Bruno Allard
Keyword(s):  
High Temperature ◽  
Internal Combustion Engines ◽  
High Efficiency ◽  
Input Voltage ◽  
Power Module ◽  
Switching Speed ◽  
Switching Losses ◽  
Power Switches ◽  
Gate Driver ◽  
Embedded Power

Emerging GaN power switches show advantages for integration in power modules at high temperature and/or high efficiency. These modules are good candidates for embedded power converters in harsh environment such as three phase inverters for Electro-Mechanical Actuators (EMA) in the vicinity of internal combustion engines. The power range is usually within 1 to 5 kW, extending sometimes up to 50 kW, using a high voltage DC bus (HVDC) that is usually comprised between 200 V and 600 V. For aeronautical applications, GaN power switches could challenge SiC transistors for their high switching speed, hence reduced switching losses, therefore lower embarked mass. For automotive applications, it is the relative promise for lower cost per Amp that is pushing this technology up. This is why a project joining GaN device conception, power module development and gate driver optimization using high temperature technologies was set-up. This paper presents the first practical results: a functional GaN power inverter-leg driven by a specific high temperature gate driver with signal and power insulation. This building block requires an auxiliary DC supply with a input voltage of 14 V or 28 V and an external PWM control signal. Current rating is 20 A and breakdown voltage is 200 V.

Use of LaB6 for a High Quality, Small Energy Spread Beam in an Electron Velocity Spectrometer

1976 ◽  
Vol 34 ◽  
pp. 534-535 ◽  
Author(s):  
P. E. Batson ◽  
C. H. Chen ◽  
J. Silcox
Keyword(s):  
High Temperature ◽  
Energy Resolution ◽  
Electron Velocity ◽  
Electronic Excitations ◽  
Small Energy ◽  
Small Intensity ◽  
Good Energy ◽  
Spectrometer System ◽  
Electron Energy Loss ◽  
Very High

Electron energy loss experiments combined with microscopy have proven to be a valuable tool for the exploration of the structure of electronic excitations in materials. These types of excitations, however, are difficult to measure because of their small intensity. In a usual situation, the filament of the microscope is run at a very high temperature in order to present as much intensity as possible at the specimen. This results in a degradation of the ultimate energy resolution of the instrument due to thermal broadening of the electron beam.We report here observations and measurements on a new LaB filament in a microscope-velocity spectrometer system. We have found that, in general, we may retain a good energy resolution with intensities comparable to or greater than those available with the very high temperature tungsten filament. We have also explored the energy distribution of this filament.

TEM study of boron additions to cobalt aluminide

1988 ◽  
Vol 46 ◽  
pp. 546-547
Author(s):  
Gerald B. Feldewerth
Keyword(s):  
High Temperature ◽  
Turbine Engines ◽  
Major Drawback ◽  
University Of Missouri ◽  
Specific Strength ◽  
Aerospace Applications ◽  
Wide Range ◽  
Ordered Alloys ◽  
The University ◽  
Very High

In recent years an increasing emphasis has been placed on the study of high temperature intermetallic compounds for possible aerospace applications. One group of interest is the B2 aiuminides. This group of intermetaliics has a very high melting temperature, good high temperature, and excellent specific strength. These qualities make it a candidate for applications such as turbine engines. The B2 aiuminides exist over a wide range of compositions and also have a large solubility for third element substitutional additions, which may allow alloying additions to overcome their major drawback, their brittle nature.One B2 aluminide currently being studied is cobalt aluminide. Optical microscopy of CoAl alloys produced at the University of Missouri-Rolla showed a dramatic decrease in the grain size which affects the yield strength and flow stress of long range ordered alloys, and a change in the grain shape with the addition of 0.5 % boron.

WIELAND-K88

Alloy Digest ◽  
2005 ◽  
Vol 54 (12) ◽  
Keyword(s):  
Thermal Conductivity ◽  
Corrosion Resistance ◽  
High Temperature ◽  
Stress Relaxation ◽  
Copper Alloy ◽  
Elevated Temperatures ◽  
Heat Treating ◽  
Relaxation Resistance ◽  
Temperature Performance ◽  
Very High

Abstract Wieland K-88 is a copper alloy with very high electrical and thermal conductivity, good strength, and excellent stress relaxation resistance at elevated temperatures. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties. It also includes information on high temperature performance and corrosion resistance as well as forming, heat treating, machining, joining, and surface treatment. Filing Code: CU-738. Producer or source: Wieland Metals Inc.

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