Piezoelectric Micromachined Ultrasonic Transducers based on PZT films

2006 ◽  
Author(s):  
Brahim Belgacem ◽  
Florian Calame ◽  
Paul Muralt
Keyword(s):  
Ultrasonic Transducers ◽  
Pzt Films

scholarly journals Simulation and fabrication of 0–3 composite PZT films for ultrahigh frequency (100–300 MHz) ultrasonic transducers

2016 ◽  
Vol 119 (9) ◽  
pp. 094103 ◽  
Author(s):  
Xiaoyang Chen ◽  
Chunlong Fei ◽  
Zeyu Chen ◽  
Ruimin Chen ◽  
Ping Yu ◽  
...  
Keyword(s):  
Ultrasonic Transducers ◽  
Ultrahigh Frequency ◽  
Pzt Films

Micromachined ultrasonic transducers based on lead zirconate titanate (PZT) films

2012 ◽  
Vol 19 (2) ◽  
pp. 211-218 ◽  
Author(s):  
Junhong Li ◽  
Chenghao Wang ◽  
Jun Ma ◽  
Mengwei Liu
Keyword(s):  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Ultrasonic Transducers ◽  
Zirconate Titanate ◽  
Pzt Films

Integration of PZT on SOI Wafers: Increasing Piezoelectric Film Thickness for Providing a Wide Range of Ultrasonic MEMS Applications

2006 ◽  
Vol 969 ◽  
Author(s):  
Brahim Belgacem ◽  
Florian Calame ◽  
Paul Muralt
Keyword(s):  
Electromechanical Coupling ◽  
Piezoelectric Coefficient ◽  
Sol Gel ◽  
Equivalent Circuit Model ◽  
Ultrasonic Transducers ◽  
Electromechanical Coupling Coefficient ◽  
Wide Range ◽  
Pzt Films ◽  
Gel Technique ◽  
Quality Factor Q

AbstractPiezoelectric micromachined ultrasonic transducers comprising a 10 μm thick Si device layer and a 1-4 μm thick piezoelectric PZT layer were investigated. The PZT films were deposited by a sol-gel technique. The transverse piezoelectric coefficient was measured as -14.9 C/m2. The electromechanical coupling increased with PZT thickness, as expected. The influence of both the shape and area of the top electrode on the device performance has been investigated. The electromechanical coupling coefficient (k) and quality factor (Q) have been measured in air and were fitted to an equivalent circuit model. The maximal k2 was obtained as 7.8%.

Piezoelectric and Capacitative Microactuators and Devices

1993 ◽  
Vol 310 ◽  
Author(s):  
M. Sayer ◽  
D. Barrow ◽  
L. Zou ◽  
C.V.R. Vasant Kumar ◽  
R. Noteboom ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Polymer Films ◽  
High Frequency ◽  
Sol Gel ◽  
Polymer Membranes ◽  
Ultrasonic Transducers ◽  
Resonant Excitation ◽  
Piezoelectric Sensors ◽  
Pzt Films

AbstractUltrasonic transducers, microactuators and resonators using sol gel PZT films, polymer membranes and silicon machining techniques can take the form of cantilevers, membranes, and array sensors. Static deflections in simple electrode configurations for PZT films supported on silicon or silicon nitride membranes are of the order of 1 μm, while larger deflections can be developed under ac and resonant excitation. High frequency acoustic actuators using capacitative excitation of polymer films have been used to evaluate the performance of piezoelectric sensors.

Piezoelectric Micromachined Ultrasonic Transducers Based on PZT Films

2002 ◽  
Vol 741 ◽  
Author(s):  
Jacek Baborowski ◽  
Nicolas Ledermann ◽  
Paul Muralt
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Basic Element ◽  
Ultrasonic Transducers ◽  
Silicon Membrane ◽  
Good Definition ◽  
Pzt Thin Film ◽  
Pzt Films ◽  
Definition Of ◽  
Insulating Liquid

ABSTRACTTest structures for piezoelectric micromachined ultrasonic transducers have been fabricated and investigated. The basic element consisted of a oxidized and platinized silicon membrane coated with a 2 μm thick (100)-textured Pb(Zr,Ti)O3 (PZT) thin film deposited by sol-gel techniques. SOI wafers have been applied to obtain a good definition of the silicon part of the membrane. Test devices have been characterized in air and in an insulating liquid.

scholarly journals Flexible Thin-Film PZT Ultrasonic Transducers on Polyimide Substrates

Sensors ◽  
2021 ◽  
Vol 21 (3) ◽  
pp. 1014
Author(s):  
Tianning Liu ◽  
Ajay Dangi ◽  
Jeong Nyeon Kim ◽  
Sri-Rajasekhar Kothapalli ◽  
Kyusun Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Lead Zirconate Titanate ◽  
Sound Pressure ◽  
Lead Zirconate ◽  
Ultrasonic Transducers ◽  
Driving Voltage ◽  
Si Substrates ◽  
Pzt Films ◽  
Solution Cast ◽  
Pressure Output

We report flexible thin-film lead zirconate titanate (PZT)-based ultrasonic transducers on polyimide substrates. The transducers are bar resonators designed to operate in the width extension mode. The active elements are 1 µm thick PZT films that were crystallized on Si substrates at 700 °C and transferred to 5 µm thick solution-cast polyimide via dissolution of an underlying release layer. Underwater pitch–catch testing between two neighboring 100 µm × 1000 µm elements showed a 0.2 mV signal at a 1.5 cm distance for a driving voltage of 5 V peak at 9.5 MHz. With the same excitation, a 33 kPa sound pressure output at a 6 mm distance and a 32% bandwidth at −6 dB were measured by hydrophone.

Electron microscopy studies of PZT ferroelectric film capacitor structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1364-1365
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  
Keyword(s):  
Electric Fields ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Lead Zirconium Titanate ◽  
Si Substrate ◽  
Film Capacitor ◽  
Pzt Films ◽  
High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

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