Pulsed laser deposition of ferroelectric bismuth titanate

2002 ◽  
Author(s):  
H. Buhay ◽  
S. Sinharoy ◽  
W.H. Kasner ◽  
M.H. Francombe ◽  
D.R. Lampe ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Bismuth Titanate ◽  
Pulsed Laser ◽  
Laser Deposition

Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

2006 ◽  
Vol 495 (1-2) ◽  
pp. 86-91 ◽  
Author(s):  
M.P. Besland ◽  
H. Djani-ait Aissa ◽  
P.R.J. Barroy ◽  
S. Lafane ◽  
P.Y. Tessier ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Bismuth Titanate ◽  
Pulsed Laser ◽  
Laser Deposition

Imprint of La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O Heterostructures Grown by Pulsed Laser Deposition

1994 ◽  
Vol 361 ◽  
Author(s):  
J. Lee ◽  
R. Ramesh ◽  
V.G. Keramidas
Keyword(s):  
Pulsed Laser Deposition ◽  
Bismuth Titanate ◽  
Polarization State ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Pronounced Effect ◽  
The Other ◽  
Laser Deposition ◽  
Switching Behavior ◽  
Crystalline Quality

ABSTRACTLa-Sr-Co-O(LSCO)/Pb-La-Zr-Ti-O(PLZT)/La-Sr-Co-O heterostructures with different crystalline quality have been grown on LaAlO3 and Si with a bismuth titanate template layer. Imprint of the heterostructures are investigated in comparison with fatigue and retention. Oxygen ambient during cooling the heterostructures was also varied to investigate the imprint. With consideration of the switching behavior caused by imprint, imprint behavior was deconvoluted from fatigue and retention. In epitaxial PLZT capacitors grown on LaAlO3, imprint behavior was found to be significantly dependent on the oxygen ambient. As the oxygen ambient became more reducing, the capacitors developed more voltage asymmetry in hysteresis loops and a more preferred polarization state directed towards the top electrode. On the other hand, oriented PLZT capacitors exhibited less pronounced effect of the oxygen ambient on the imprint behavior.

Pulsed laser deposition (PLD) of oriented bismuth titanate films for integrated electronic applications

1992 ◽  
Vol 1 (2-4) ◽  
pp. 213-222 ◽  
Author(s):  
H. Buhay ◽  
S. Sinharoy ◽  
M. H. Francombe ◽  
W. H. Kasner ◽  
J. Talvacchio ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Bismuth Titanate ◽  
Pulsed Laser ◽  
Laser Deposition

Pulsed laser deposition and ferroelectric characterization of bismuth titanate films

1991 ◽  
Vol 58 (14) ◽  
pp. 1470-1472 ◽  
Author(s):  
H. Buhay ◽  
S. Sinharoy ◽  
W. H. Kasner ◽  
M. H. Francombe ◽  
D. R. Lampe ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Bismuth Titanate ◽  
Pulsed Laser ◽  
Laser Deposition

Polarization Enhancement of Nd-Modified Bismuth Titanate Prepared by Pulsed Laser Deposition at Low Temperature

2003 ◽  
Vol 784 ◽  
Author(s):  
Wu Wenbiao ◽  
Shibuya Akira ◽  
Noda Minoru ◽  
Okuyama Masanori
Keyword(s):  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Temperature Treatment ◽  
Laser Deposition ◽  
Fatigue Properties ◽  
Low Temperature Treatment

ABSTRACTNeodymium-modified Bi4Ti3O12(BNdT) thin films have been prepared by pulsed laser deposition (PLD), aiming to realize enhanced ferroelectric properties by a low temperature treatment. When deposited at 500°C, the film shows P-E hysteresis having twice remanent polarization 2Pr of 78.8 μC/cm-2, coercive force Ec of about 250 kV/cm, and leakage current of less than 10-7 A/cm2 from -50 to +50 kV/cm. Good fatigue properties of BNdT films deposited at 5 Hz have been obtained up to 1010 cycles of 500 kHz bipolar square pulses, with less than 25% decrease of +Pr and -Pr.

Epitaxial growth of ferroelectric bismuth titanate thin films by pulsed laser deposition

1990 ◽  
Vol 57 (15) ◽  
pp. 1505-1507 ◽  
Author(s):  
R. Ramesh ◽  
K. Luther ◽  
B. Wilkens ◽  
D. L. Hart ◽  
E. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Bismuth Titanate ◽  
Pulsed Laser ◽  
Laser Deposition

Microanalysis of silicate glass films grown on α-Al2O3 by pulsed-laser deposition

1993 ◽  
Vol 51 ◽  
pp. 438-439
Author(s):  
Michael P. Mallamaci ◽  
James Bentley ◽  
C. Barry Carter
Keyword(s):  
Liquid Phase ◽  
Single Crystal ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ceramic Materials ◽  
Laser Deposition ◽  
Triple Junctions ◽  
Ion Milling ◽  
Multicomponent Oxides ◽  
Glass Films

Glass-oxide interfaces play important roles in developing the properties of liquid-phase sintered ceramics and glass-ceramic materials. Deposition of glasses in thin-film form on oxide substrates is a potential way to determine the properties of such interfaces directly. Pulsed-laser deposition (PLD) has been successful in growing stoichiometric thin films of multicomponent oxides. Since traditional glasses are multicomponent oxides, there is the potential for PLD to provide a unique method for growing amorphous coatings on ceramics with precise control of the glass composition. Deposition of an anorthite-based (CaAl2Si2O8) glass on single-crystal α-Al2O3 was chosen as a model system to explore the feasibility of PLD for growing glass layers, since anorthite-based glass films are commonly found in the grain boundaries and triple junctions of liquid-phase sintered α-Al2O3 ceramics.Single-crystal (0001) α-Al2O3 substrates in pre-thinned form were used for film depositions. Prethinned substrates were prepared by polishing the side intended for deposition, then dimpling and polishing the opposite side, and finally ion-milling to perforation.

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