Polarization Enhancement of Nd-Modified Bismuth Titanate Prepared by Pulsed Laser Deposition at Low Temperature

2003 ◽  
Vol 784 ◽  
Author(s):  
Wu Wenbiao ◽  
Shibuya Akira ◽  
Noda Minoru ◽  
Okuyama Masanori
Keyword(s):  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Temperature Treatment ◽  
Laser Deposition ◽  
Fatigue Properties ◽  
Low Temperature Treatment

ABSTRACTNeodymium-modified Bi4Ti3O12(BNdT) thin films have been prepared by pulsed laser deposition (PLD), aiming to realize enhanced ferroelectric properties by a low temperature treatment. When deposited at 500°C, the film shows P-E hysteresis having twice remanent polarization 2Pr of 78.8 μC/cm-2, coercive force Ec of about 250 kV/cm, and leakage current of less than 10-7 A/cm2 from -50 to +50 kV/cm. Good fatigue properties of BNdT films deposited at 5 Hz have been obtained up to 1010 cycles of 500 kHz bipolar square pulses, with less than 25% decrease of +Pr and -Pr.

Low Temperature Preparation of Sr2(Ta1-x, Nbx)2O7 Ferroelectric Thin Film by Pulsed Laser Deposition

1999 ◽  
Vol 596 ◽  
Author(s):  
Minoru Noda ◽  
Toshiyuki Nakaiso ◽  
Hideki Sugiyama ◽  
Masanori Okuyama
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pulsed Laser ◽  
Target Material ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Low Temperature Preparation

AbstractPreferentially (151)-oriented Sr2(Ta1-x, Nbx)2O7 (STN) thin films on Pt have been prepared at temperatures as low as 550 and 600°C, in O2 and N2O atmospheres, respectively, by pulsed laser deposition (PLD). The temperatures are significantly lower than those prepared by sol-gel methods, where 950°C was reported. These are the lowest growth temperatures of crystalline STN thin films. Composition ratio (x) in the target material was determined to be around 0.3 from measurement of the Curie temperature and ferroelectric properties. Active oxygen generated by laser irradiation in ambient O2 or N2O atmosphere is found to be very effective for chemical reaction, and decreases the growth temperature of crystalline STN films. It is also confirmed by surface AFM and cross-sectional SEM observations that the film has a columnar-shaped structure with grain size ranging from 50 to 100 nm. Remanent polarization (Pr) and coercive field (Ec) are 0.4μ C/cm2 and 30 kV/cm, respectively. Finally, we expect the low temperature STN film prepared by PLD to be a promising ferroelectric for the application in ferroelectric memory FETs.

Ferroelectric Properties of Bi4-xYbxTi3O12 Thin Films

2013 ◽  
Vol 591 ◽  
pp. 216-219
Author(s):  
Chong Qing Huang ◽  
X.A. Mei ◽  
M. Chen ◽  
J. Liu
Keyword(s):  
Thin Films ◽  
Coercive Field ◽  
Marked Improvement ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Method ◽  
Si Substrate

Yb-doped bismuth titanate and random oriented Bi4-xYbxTi3O12 (BYbT) thin films were fabricated on Pt/Ti/SiO2/Si substrate with pulsed laser deposition method. The structures and ferroelectric properties of the BYbT films were investigated. Yb doping resulted in a marked improvement in remanent polarization (Pr) and coercive field (Ec). At an applied electric field of 120kV/cm, the Pr and (Ec) of the BYbT (x=0.8) films annealed at 650°C were 20 μC/cm2 and 85 KV/cm, respectively.

Epitaxial growth and ferroelectric properties of SrBi2Nb2O9(115) thin films grown by pulsed-laser deposition on epitaxial Pt(111) electrode

2003 ◽  
Vol 83 (26) ◽  
pp. 5500-5502 ◽  
Author(s):  
J.-R. Duclère ◽  
M. Guilloux-Viry ◽  
V. Bouquet ◽  
A. Perrin ◽  
E. Cattan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition

La-doped effect on the ferroelectric properties of Bi4Ti3O12–SrBi4Ti4O15 thin film fabricated by pulsed laser deposition

2002 ◽  
Vol 92 (9) ◽  
pp. 5420-5424 ◽  
Author(s):  
J. S. Zhu ◽  
D. Su ◽  
X. M. Lu ◽  
H. X. Qin ◽  
Y. N. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
La Doped

Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

2014 ◽  
Vol 633 ◽  
pp. 378-381
Author(s):  
Bei Li ◽  
X.B. Liu ◽  
M. Chen ◽  
X.A. Mei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Layered Structure ◽  
Remanent Polarization ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

Effect of oxygen pressure performance of PZO thin films deposited by pulsed laser deposition at low temperature

2017 ◽  
Vol 727 ◽  
pp. 1273-1279 ◽  
Author(s):  
Shihui Yu ◽  
Binhui Zhu ◽  
Haoran Zheng ◽  
Lingxia Li ◽  
Siliang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Effect Of Oxygen

Low-temperature fabrication of superconducting FeSe thin films by pulsed laser deposition

2010 ◽  
Vol 519 (5) ◽  
pp. 1540-1545 ◽  
Author(s):  
Ta-Kun Chen ◽  
Jiu-Yong Luo ◽  
Chung-Ting Ke ◽  
Hsian-Hong Chang ◽  
Tzu-Wen Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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