Understanding the degradation sources under ON-state stress in AlGaN/GaN-on-Si SBD: Investigation of the anode-cathode spacing length dependence

2016 ◽  
Author(s):  
Andrea Natale Tallarico ◽  
Paolo Magnone ◽  
Steve Stoffels ◽  
Silvia Lenci ◽  
Jie Hu ◽  
...  
Keyword(s):  
Length Dependence ◽  
Gan On Si ◽  
Spacing Length ◽  
State Stress

High temperature on- and off-state stress of GaN-on-Si HEMTs with in-situ Si3N4 cap layer

2010 ◽  
Author(s):  
Denis Marcon ◽  
Farid Medjdoub ◽  
Domenica Visalli ◽  
Marleen Van Hove ◽  
Joff Derluyn ◽  
...  
Keyword(s):  
High Temperature ◽  
Cap Layer ◽  
Gan On Si ◽  
State Stress

Self-assembly and sequence length dependence on nanofibrils of polyglutamine peptides

Neuropeptides ◽  
2016 ◽  
Vol 57 ◽  
pp. 71-83 ◽  
Author(s):  
Mohammed Inayathullah ◽  
Aaron Tan ◽  
Rebecca Jeyaraj ◽  
James Lam ◽  
Nam-Joon Cho ◽  
...  
Keyword(s):  
Self Assembly ◽  
Sequence Length ◽  
Length Dependence

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

2021 ◽  
Vol 118 (24) ◽  
pp. 243501
Author(s):  
Xiaolu Guo ◽  
Yaozong Zhong ◽  
Xin Chen ◽  
Yu Zhou ◽  
Shuai Su ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Gan On Si

scholarly journals Challenges and Perspectives for Vertical GaN-on-Si Trench MOS Reliability: From Leakage Current Analysis to Gate Stack Optimization

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2316
Author(s):  
Kalparupa Mukherjee ◽  
Carlo De Santi ◽  
Matteo Borga ◽  
Karen Geens ◽  
Shuzhen You ◽  
...  
Keyword(s):  
Field Effect Transistor ◽  
Dynamic Performance ◽  
Power Conversion ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Current Analysis ◽  
Power Transistors ◽  
Trench Structure ◽  
Effect Transistor ◽  
Gan On Si

The vertical Gallium Nitride-on-Silicon (GaN-on-Si) trench metal-oxide-semiconductor field effect transistor (MOSFET) is a promising architecture for the development of efficient GaN-based power transistors on foreign substrates for power conversion applications. This work presents an overview of recent case studies, to discuss the most relevant challenges related to the development of reliable vertical GaN-on-Si trench MOSFETs. The focus lies on strategies to identify and tackle the most relevant reliability issues. First, we describe leakage and doping considerations, which must be considered to design vertical GaN-on-Si stacks with high breakdown voltage. Next, we describe gate design techniques to improve breakdown performance, through variation of dielectric composition coupled with optimization of the trench structure. Finally, we describe how to identify and compare trapping effects with the help of pulsed techniques, combined with light-assisted de-trapping analyses, in order to assess the dynamic performance of the devices.

scholarly journals Channel-length dependence of particle diffusivity in confinement

Soft Matter ◽  
2021 ◽  
Author(s):  
Soichiro Tottori ◽  
Karolis Misiunas ◽  
Vahe Tshitoyan ◽  
Ulrich Keyser
Keyword(s):  
Channel Length ◽  
Fundamental Importance ◽  
Large Molecules ◽  
Diffusive Behavior ◽  
Channel Proteins ◽  
Length Dependence

Understanding the diffusive behavior of particles and large molecules in channels is of fundamental importance in biological and synthetic systems, such as channel proteins, nanopores, and nanofluidics. Although theoretical and...

Sign in / Sign up

Export Citation Format

Share Document