A study on device robustness with integrated effects from low parts-per-billion level of metallic elements in wafer cleaning process chemicals

2016 ◽  
Author(s):  
K. H. Raymond Tan ◽  
P. L. Emily Liew ◽  
Chai Chin Chin ◽  
C. Y. Joanne Wong
Keyword(s):  
Cleaning Process ◽  
Metallic Elements ◽  
Wafer Cleaning

Effect of Dissolved Oxygen on Cu Corrosion in Single Wafer Cleaning Process

2009 ◽  
Vol 48 (4) ◽  
pp. 04C023 ◽  
Author(s):  
Masayoshi Imai ◽  
Yukinari Yamashita ◽  
Takashi Futatsuki ◽  
Morio Shiohara ◽  
Seiichi Kondo ◽  
...  
Keyword(s):  
Dissolved Oxygen ◽  
Cleaning Process ◽  
Wafer Cleaning ◽  
Cu Corrosion

Study of Static Electricity in Wafer Cleaning Process

2007 ◽  
Vol 134 ◽  
pp. 263-266 ◽  
Author(s):  
Masayuki Wada ◽  
T. Sueto ◽  
H. Takahashi ◽  
N. Hayashi ◽  
Atsuro Eitoku
Keyword(s):  
Cleaning Process ◽  
Static Electricity ◽  
Wafer Cleaning

A Comparative Study for the Backside Illumination (BSI) Technology Using Bonding Wafer Cleaning Process for Advanced CMOS Image Sensor

2012 ◽  
Vol 195 ◽  
pp. 75-78
Author(s):  
Chung Kyung Jung ◽  
Sung Wook Joo ◽  
Seoung Hun Jeong ◽  
Sang Wook Ryu ◽  
Han Choon Lee ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Comparative Study ◽  
Quantum Efficiency ◽  
Wafer Bonding ◽  
Image Sensor ◽  
Silicon On Insulator ◽  
Cleaning Process ◽  
Electrochemical Systems ◽  
Wafer Cleaning ◽  
Direct Wafer Bonding

Over the last decades, the concept of backside illumination (BSI) sensors has become one of the leading solutions to optical challenges such as improved quantum efficiency (QE), and cross-talk, respectively [1-. Direct wafer bonding is a method for fabricating advanced substrates for micro-electrochemical systems (MEMS) and integrated circuits (IC). The most typical example of such an advanced substrate is the silicon-on-insulator (SOI) wafer.

Process damage in single-wafer cleaning process

1997 ◽  
Author(s):  
Soichi Nadahara ◽  
Kazuo Saki ◽  
Hiroshi Tomita
Keyword(s):  
Cleaning Process ◽  
Wafer Cleaning ◽  
Process Damage

Optimization of 28nm HK/MG single wafer cleaning process

2016 ◽  
Author(s):  
Haihui Liang ◽  
JiaLei Liu ◽  
HuanXin Liu ◽  
Yonggen He ◽  
Jingang Wu ◽  
...  
Keyword(s):  
Cleaning Process ◽  
Wafer Cleaning

Pattern Collapse-Free Drying with Sacrificial Gap Fill Polymers

2018 ◽  
Vol 282 ◽  
pp. 194-200
Author(s):  
Desaraju Varaprasad ◽  
Songyuan Xie ◽  
Evelyn Kennedy ◽  
Amanuel Gebrebrhan ◽  
Hongmin Huang ◽  
...  
Keyword(s):  
Film Thickness ◽  
Polymer Film ◽  
Removal Rate ◽  
Thermal Exposure ◽  
Solid Polymer ◽  
Mechanical Support ◽  
Cleaning Process ◽  
Semiconductor Wafer ◽  
Wafer Cleaning

This work discusses pattern collapse-free drying by application of a sacrificial polymer during the semiconductor wafer cleaning process. The sacrificial polymer is dispensed onto the wafer, displacing the rinse liquid and subsequently dried to form a solid polymer fill within the patterned structure, providing both mechanical support and a means for dry polymer removal by either plasma or thermal exposure. Polymer film thickness, gap fill capability and removal rate are explored for plasma ashable and thermally removable polymer families.

Novel Cleaning Method of SiC Wafer with Transition Metal Complex

2012 ◽  
Vol 717-720 ◽  
pp. 877-880
Author(s):  
Maiko Kubo ◽  
Makoto Hidaka ◽  
Motohiro Kageyama ◽  
Tomomichi Okano ◽  
Hisayoshi Kobayashi
Keyword(s):  
Transition Metal ◽  
Metal Complex ◽  
Transition Metal Complex ◽  
Pure Water ◽  
Wafer Surface ◽  
Cleaning Process ◽  
Cleaning Method ◽  
Wafer Cleaning ◽  
Atomic Force ◽  
Sic Wafer

In this article, we report a new cleaning method for silicon carbide (SiC) wafers. We found that the dipping treatment in hydrogen fluoride (HF) solution damages the SiC in the “RCA cleaning process”, so we have designed a new cleaning method that does not use HF and reduced the cleaning process to three steps. The characteristic factor of this new method is using a transition metal complex. Generally, no metals have been used for wafer cleaning, but we deliberately used metal and found it could clean the wafer surface very well. After cleaning, the atomic force microscope (AFM) and “Candela” images showed that the particles on most parts of the SiC surface had been removed and the contact angle for ultra-pure water became very low.

Ultrafine Particle Removal in the Wafer Cleaning Process Using an Aqueous Solution with a High Concentration of Dissolved O3 and HF

2021 ◽  
Vol 314 ◽  
pp. 214-217
Author(s):  
Hyeon Joon Han ◽  
Hunhee Lee ◽  
Charles Kim ◽  
Yongmok Kim ◽  
Jinok Moon ◽  
...  
Keyword(s):  
Hydrofluoric Acid ◽  
Semiconductor Manufacturing ◽  
Ultrafine Particle ◽  
High Reactivity ◽  
High Impact ◽  
Manufacturing Processes ◽  
Particle Removal ◽  
Cleaning Process ◽  
High Concentration ◽  
Wafer Cleaning

Sulfuric Peroxide Mixture (SPM, H2SO4 + H2O2) has been widely used in semiconductor manufacturing processes due to its high reactivity and attractive price. However, SPM releases SO42- ions that can be high impact on the environmental contaminations. Therefore, the SPM process requires a high cost wastewater treatment. So, the development of alternative chemicals has been becoming an important task in the semiconductor manufacturing process. In this paper, we evaluated the feasibility of replacing SPM with dissolved ozone water (DIO3) in the wafer cleaning process, and confirmed that the Particle removal efficiency (PRE) was improved around 68% by mixing with diluted hydrofluoric acid (DHF). And, the PRE was also increased when the concentration of ozone in dissolved ozone water increased. Additionally the PRE was improved up to 98% by combining physical cleaning after O3 process.

Defects of Silicon Substrates Caused by Electro-Static Discharge in Single Wafer Cleaning Process

2009 ◽  
Vol 145-146 ◽  
pp. 185-188 ◽  
Author(s):  
Yoshiya Hagimoto ◽  
Hayato Iwamoto ◽  
Yasushi Honbe ◽  
Takuro Fukunaga ◽  
Hitoshi Abe
Keyword(s):  
Semiconductor Manufacturing ◽  
Electrostatic Discharge ◽  
Silicon Substrates ◽  
Cleaning Process ◽  
Insulation Failure ◽  
Wafer Cleaning ◽  
Transmission Electron ◽  
Edx Analyses ◽  
Thin Gate Oxide ◽  
Water Rinsing

While batch wafer cleaning processes have been conventionally used in the semiconductor manufacturing for many years, the use of single wafer cleaning processes in the manufacturing has recently become increasingly widespread. Single wafer cleaning processes have the advantages of reducing particle and metal contamination, however, electric charge or electrostatic discharge phenomena occurring in these processes causes serious problems such as device destruction through insulation failure and circuit disconnection [1,2]. Well-known examples are the breakdown of the ultra-thin gate oxide and the dissolution of Cu wiring due to charging-up damage in de-ionized water rinsing, which occur during the single wafer wet cleaning process in semiconductor manufacturing. We investigated the problem of wafer defects caused by electrostatic discharge and characterized them using transmission electron microscope (TEM) and energy dispersive X-ray (EDX) analyses.

Sign in / Sign up

Export Citation Format

Share Document