Temperature effect on reflected laser probing signal of multiple elementary substructures

Author(s):  
M. M. Rebai ◽  
F. Darracq ◽  
J-P. Guillet ◽  
D. Lewis ◽  
P. Perdu ◽  
...  
1987 ◽  
Vol 84 ◽  
pp. 385-391
Author(s):  
Smedley John E. ◽  
Hess Wayne P. ◽  
Haugen Harold K. ◽  
R. Leone Stephen

Author(s):  
João Felipe de Araujo Martos ◽  
Paulo Toro ◽  
Israel Rêgo ◽  
sergio nicolás pachón laitón ◽  
Bruno Coelho Lima

Author(s):  
SAMUEL BRITO ◽  
RODOLFO SOBRAL ◽  
Luiz Carlos Sacramento ◽  
Marcos Paulo de Souza Junior

2012 ◽  
Vol 18 (5) ◽  
pp. 1619-1626
Author(s):  
Yibin Zhao ◽  
Xudong Shao ◽  
Jia Li ◽  
Xiaoqin Jin ◽  
Jing Ma ◽  
...  

Author(s):  
Samuel Chef ◽  
Chung Tah Chua ◽  
Yu Wen Siah ◽  
Philippe Perdu ◽  
Chee Lip Gan ◽  
...  

Abstract Today’s VLSI devices are neither designed nor manufactured for space applications in which single event effects (SEE) issues are common. In addition, very little information about the internal schematic and usually nothing about the layout or netlist is available. Thus, they are practically black boxes for satellite manufacturers. On the other hand, such devices are crucial in driving the performance of spacecraft, especially smaller satellites. The only way to efficiently manage SEE in VLSI devices is to localize sensitive areas of the die, analyze the regions of interest, study potential mitigation techniques, and evaluate their efficiency. For the first time, all these activities can be performed using the same tool with a single test setup that enables a very efficient iterative process that reduce the evaluation time from months to days. In this paper, we will present the integration of a pulsed laser for SEE study into a laser probing, laser stimulation, and emission microscope system. Use of this system will be demonstrated on a commercial 8 bit microcontroller.


Author(s):  
Travis Eiles ◽  
Patrick Pardy

Abstract This paper demonstrates a breakthrough method of visible laser probing (VLP), including an optimized 577 nm laser microscope, visible-sensitive detector, and an ultimate-resolution gallium phosphide-based solid immersion lens on the 10 nm node, showing a 110 nm resolution. This is 2x better than what is achieved with the standard suite of probing systems using typical infrared (IR) wavelengths today. Since VLP provides a spot diameter reduction of 0.5x over IR methods, it is reasonable, based simply on geometry, to project that VLP using the 577 nm laser will meet the industry needs for laser probing for both the 10 nm and 7 nm process nodes. Based on its high level of optimization, including high resolution and specialized solid immersion lens, it is highly likely that this VLP technology will be one of the last optically-based fault isolation methods successfully used.


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