scholarly journals ESD protection structure with embedded high-voltage P-type scr for automotive vacuum-fluorescent-display (VFD) applications

2005 ◽  
Author(s):  
Ming-Dou Ker ◽  
Wei-Jen Chang ◽  
Marcus Yang ◽  
Cheng-Chung Chen ◽  
Mu-Chin Chan ◽  
...  
Keyword(s):  
High Voltage ◽  
Esd Protection ◽  
P Type ◽  
Vacuum Fluorescent Display

Novel Symmetrical Dual-Directional SCR With p-Type Guard Ring for High-Voltage ESD Protection

2021 ◽  
pp. 1-4
Author(s):  
Feibo Du ◽  
Kuan-Chang Chang ◽  
Xinnan Lin ◽  
Fei Hou ◽  
Le Chen ◽  
...  
Keyword(s):  
High Voltage ◽  
Guard Ring ◽  
Esd Protection ◽  
P Type

ESD protection for high voltage LDMOS with sense FET

2002 ◽  
Author(s):  
Y.S. Choi ◽  
J.J. Kim ◽  
C.K. Jeon ◽  
M.H. Kim ◽  
S.L. Kim ◽  
...  
Keyword(s):  
High Voltage ◽  
Esd Protection

Low-Density Fan-Out Heterogeneous Integration of MEMS Tunable Capacitor and RF SOI Switch

2019 ◽  
Vol 2019 (1) ◽  
pp. 000051-000055
Author(s):  
Rameen Hadizadeh ◽  
Anssi Laitinen ◽  
Niko Kuusniemi ◽  
Volker Blaschke ◽  
David Molinero ◽  
...  
Keyword(s):  
High Voltage ◽  
Microelectromechanical Systems ◽  
Performance Metrics ◽  
Circuit Board ◽  
Low Density ◽  
Rf Switch ◽  
Tunable Capacitor ◽  
Esd Protection ◽  
Mems Device ◽  
The Impact

Abstract Using Low-Density Fan-Out (LDFO) packaging technology, a radio frequency (RF) microelectromechanical systems (MEMS) tunable capacitor array composed of electrostatically actuated beams on 180nm high-voltage CMOS silicon was heterogeneously integrated with a single-pole four-terminal (SP4T) RF switch on 180nm CMOS silicon-on-insulator (SOI). The primary objective of this study was to determine the manufacturability of this System-in-Package (SiP) design, which is proven at time zero through survival of the MEMS device based on acceptable MEMS performance metrics. In addition, the RF SOI switch provides high-voltage electrostatic discharge (ESD) protection for the MEMS device. Capacitive MEMS structures are particularly sensitive to unpredictable electrostatic charging scenarios, such as handling after package assembly and printed circuit board (PCB) surface mount processing. Consequently, resistance to dielectric breakdown by means of robust ESD protection is a very desirable quality. Integrating the RF switch in close proximity with the MEMS device not only enables the ability to withstand charging scenarios in excess of 1kV (human body model), it mitigates the impact of parasitics on RF performance by minimizing interconnect lengths and complexity.

High-Voltage ESD Protection Device With Fast Transient Reaction and High Holding Voltage

2019 ◽  
Vol 66 (7) ◽  
pp. 2884-2891 ◽  
Author(s):  
Da-Wei Lai ◽  
Gijs de Raad ◽  
Stephen Sque ◽  
Wim Peters ◽  
Theo Smedes
Keyword(s):  
High Voltage ◽  
Protection Device ◽  
Esd Protection ◽  
Fast Transient
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