Electromigration reliability of Cu interconnects and the impact of low-k dielectrics

2004 ◽  
Author(s):  
P.S. Ho ◽  
K.-D. Lee ◽  
E.T. Ogawa ◽  
X. Lu ◽  
H. Matsuhashi
Keyword(s):  
Cu Interconnects ◽  
The Impact ◽  
Low K

Electromigration failure mode concerning negative resistance shift of Cu interconnects buried in porous low-k dielectric

2017 ◽  
Vol 110 (8) ◽  
pp. 083502 ◽  
Author(s):  
Hui Zheng ◽  
Binfeng Yin ◽  
Hewei Yu ◽  
Leigang Chen ◽  
Lin Gao ◽  
...  
Keyword(s):  
Failure Mode ◽  
Negative Resistance ◽  
Cu Interconnects ◽  
Low K

High-Performance Extremely Low-k Film Integration Technology with Metal Hard Mask Process for Cu Interconnects

2016 ◽  
Vol 5 (10) ◽  
pp. P578-P583 ◽  
Author(s):  
Naoki Torazawa ◽  
Susumu Matsumoto ◽  
Takeshi Harada ◽  
Yasunori Morinaga ◽  
Daisuke Inagaki ◽  
...  
Keyword(s):  
High Performance ◽  
Hard Mask ◽  
Integration Technology ◽  
Cu Interconnects ◽  
Low K

Enhancement and Modeling of Drain Current in Negative Capacitance Double Gate TFET

2021 ◽  
Author(s):  
SHIKHA U S ◽  
Rekha K James ◽  
Jobymol Jacob ◽  
Anju Pradeep
Keyword(s):  
Drain Current ◽  
Gate Oxide ◽  
Negative Capacitance ◽  
Double Gate ◽  
High K ◽  
Gate Control ◽  
Effect Transistor ◽  
Dimensional Simulation ◽  
The Impact ◽  
Low K

Abstract The drain current improvement in a Negative Capacitance Double Gate Tunnel Field Effect Transistor (NC-DG TFET) with the help of Heterojunction (HJ) at the source-channel region is proposed and modeled in this paper. The gate oxide of the proposed TFET is a stacked configuration of high-k over low-k to improve the gate control without any lattice mismatches. Tangent Line Approximation (TLA) method is used here to model the drain current accurately. The model is validated by incorporating two dimensional simulation of DG-HJ TFET with one dimensional Landau-Khalatnikov (LK) equation. The model matches excellently with the device simulation results. The impact of stacked gate oxide topology is also studied in this paper by comparing the characteristics with unstacked gate oxide. Voltage amplification factor (Av), which is an important parameter in NC devices is also analyzed.

scholarly journals Influence of aquifer and streambed heterogeneity on the distribution of groundwater discharge

2009 ◽  
Vol 13 (1) ◽  
pp. 69-77 ◽  
Author(s):  
E. Kalbus ◽  
C. Schmidt ◽  
J. W. Molson ◽  
F. Reinstorf ◽  
M. Schirmer
Keyword(s):  
Groundwater Flow ◽  
Transport Model ◽  
Regional Scale ◽  
Base Case ◽  
Case Scenario ◽  
Base Case Scenario ◽  
Heterogeneous Distribution ◽  
Heterogeneous Aquifer ◽  
The Impact ◽  
Low K

Abstract. The spatial distribution of groundwater fluxes through a streambed can be highly variable, most often resulting from a heterogeneous distribution of aquifer and streambed permeabilities along the flow pathways. Using a groundwater flow and heat transport model, we defined four scenarios of aquifer and streambed permeability distributions to simulate and assess the impact of subsurface heterogeneity on the distribution of groundwater fluxes through the streambed: (a) a homogeneous low-K streambed within a heterogeneous aquifer; (b) a heterogeneous streambed within a homogeneous aquifer; (c) a well connected heterogeneous low-K streambed within a heterogeneous aquifer; and (d) a poorly connected heterogeneous low-K streambed within a heterogeneous aquifer. The simulation results were compared with a base case scenario, in which the streambed had the same properties as the aquifer, and with observed data. The results indicated that the aquifer has a stronger influence on the distribution of groundwater fluxes through the streambed than the streambed itself. However, a homogeneous low-K streambed, a case often implemented in regional-scale groundwater flow models, resulted in a strong homogenization of fluxes, which may have important implications for the estimation of peak mass flows. The flux distributions simulated with heterogeneous low-K streambeds were similar to the flux distributions of the base case scenario, despite the lower permeability. The representation of heterogeneous distributions of aquifer and streambed properties in the model has been proven to be beneficial for the accuracy of flow simulations.

scholarly journals Electrical and Reliability Characteristics of Self-Forming Barrier for CuNd/SiOCH Films in Cu Interconnects

Coatings ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 155
Author(s):  
Yi-Lung Cheng ◽  
Chih-Yen Lee ◽  
Wei-Fan Peng ◽  
Giin-Shan Chen ◽  
Jau-Shiung Fang
Keyword(s):  
Dielectric Film ◽  
Alloy Film ◽  
Dielectric Films ◽  
Low Dielectric Constant ◽  
Electrical Characteristics ◽  
Sputtering Deposition ◽  
Cu Interconnects ◽  
Low Dielectric ◽  
Reliability Characteristics ◽  
Low K

In this study, Cu-2.2 at. % Nd alloy films using a co-sputtering deposition method were directly deposited onto porous low-dielectric-constant (low-k) films (SiOCH). The effects of CuNd alloy film on the electrical properties and reliability of porous low-k dielectric films were studied. The electrical characteristics and reliability of the porous low-k dielectric film with CuNd alloy film were enhanced by annealing at 425 °C. The formation of self-forming barrier at the CuNd/SiOCH interface was responsible for this improvement. Therefore, integration with CuNd and porous low-k dielectric is a promising process for advanced Cu interconnects.

Effect of Via-Profile on the Via Reliability in Scaled-down Low-k/Cu Interconnects

2009 ◽  
Author(s):  
I. Kume ◽  
N. Inoue ◽  
S. Saito ◽  
N. Furutake ◽  
J. Kawahara ◽  
...  
Keyword(s):  
Cu Interconnects ◽  
Down Low ◽  
Low K
Sign in / Sign up

Export Citation Format

Share Document