Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique

Author(s):  
M.V. Dunga ◽  
A. Kumar ◽  
V. Ramgopal Rao
2002 ◽  
Vol 23 (4) ◽  
pp. 209-211 ◽  
Author(s):  
Najeev-ud-din ◽  
M.V. Dunga ◽  
A. Kumar ◽  
J. Vasi ◽  
V. Ramgopal Rao ◽  
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1988 ◽  
Vol 24 (4) ◽  
pp. 238 ◽  
Author(s):  
S.S. Tsao ◽  
D.R. Myers ◽  
G.K. Celler

1997 ◽  
Vol 44 (12) ◽  
pp. 2234-2241 ◽  
Author(s):  
M. Valdinoci ◽  
L. Colalongo ◽  
G. Baccarani ◽  
G. Fortunato ◽  
A. Pecora ◽  
...  

2008 ◽  
Vol 52 (6) ◽  
pp. 930-936 ◽  
Author(s):  
W.J. Wu ◽  
R.H. Yao ◽  
T. Chen ◽  
R.S. Chen ◽  
W.L. Deng ◽  
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2006 ◽  
Vol 45 (5B) ◽  
pp. 4370-4373 ◽  
Author(s):  
Taizoh Sadoh ◽  
Yasuhiro Ohyama ◽  
Atsushi Kenjo ◽  
Keiji Ikeda ◽  
Yoshimi Yamashita ◽  
...  

1996 ◽  
Vol 06 (C3) ◽  
pp. C3-49-C3-54 ◽  
Author(s):  
S.-H. Renn ◽  
C. Raynaud ◽  
F. Balestra

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