Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

2002 ◽  
Author(s):  
Wei Yip Loh ◽  
Byung Jin Cho ◽  
Ming Fu Li
Keyword(s):  
Gate Oxides ◽  
Current Stressing

Low Temperature (850 °C) Two-Step N2O Annealed Thin Gate Oxides

1996 ◽  
Vol 428 ◽  
Author(s):  
Chao Sung Lai ◽  
Chung Len Lee ◽  
Tan Fu Lei ◽  
Tien Sheng Chao ◽  
Chun Hung Peng ◽  
...  
Keyword(s):  
Low Temperature ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Short Channel ◽  
Gate Oxides ◽  
Current Stressing ◽  
State Generation

AbstractThe electrical characteristics of thin gate dielectrics prepared by low temperature (850 °C) two-step N20 nitridation (LTN) process are presented. The gate oxides were grown by wet oxidation at 800 °C and then annealed in N2O at 850 °C. The oxide with N2O anneal, even for low temperature (850 °C), had nitrogen incorporation at oxide/silicon interface. The charge trapping phenomena and interface-state generation (ΔDitm) induced by constant current stressing were reduced and charge-to-breakdown (Qbd) under constant current stressing was increased. This LTN oxynitride was used as gate dielectric for N-channel MOSFET, whose hot-canrier immunity was shown improved and reverse short channel effect (RSCE) was suppressed.

High-k gate oxides integration of graphene based infrared detector

2012 ◽  
Vol 31 (2) ◽  
pp. 118-121
Author(s):  
Peng ZHOU ◽  
Hong-Qiang WEI ◽  
Qing-Qing SUN ◽  
Li YE ◽  
Lin CHEN ◽  
...  
Keyword(s):  
Infrared Detector ◽  
Gate Oxides ◽  
High K

Logistic model for leakage current in electrical stressed ultra-thin gate oxides

2003 ◽  
Vol 39 (9) ◽  
pp. 749 ◽  
Author(s):  
E. Miranda ◽  
A. Cester ◽  
A. Paccagnella
Keyword(s):  
Leakage Current ◽  
Logistic Model ◽  
Gate Oxides

Reliability of ultra-thin gate oxides grown in low-pressure N2O ambient or on nitrogen-implanted silicon

1999 ◽  
Vol 48 (1-4) ◽  
pp. 59-62
Author(s):  
A.J. Bauer ◽  
M. Beichele ◽  
M. Herden ◽  
H. Ryssel
Keyword(s):  
Low Pressure ◽  
Gate Oxides

Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperature and current stressing

2001 ◽  
Vol 41 (8) ◽  
pp. 1103-1108 ◽  
Author(s):  
Joachim Würfl ◽  
Paul Kurpas ◽  
Frank Brunner ◽  
Michael Mai ◽  
Matthias Rudolph ◽  
...  
Keyword(s):  
Current Stressing ◽  
Degradation Properties

Impact of Organic Contaminants from the Environment on Electrical Characteristics of Thin Gate Oxides

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2468-2471 ◽  
Author(s):  
Tamotsu Ogata ◽  
Cozy Ban ◽  
Akemi Ueyama ◽  
Seiji Muranaka ◽  
Tomohiko Hayashi ◽  
...  
Keyword(s):  
Organic Contaminants ◽  
Electrical Characteristics ◽  
Gate Oxides
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