Characterization and application of highly sensitive infra-red emission microscopy for microprocessor backside failure analysis

1999 ◽  
Author(s):  
Loh Ter Hoe ◽  
Yee Wai Mun ◽  
Chew Yin Yan
Keyword(s):  
Failure Analysis ◽  
Red Emission ◽  
Highly Sensitive ◽  
Infra Red ◽  
Emission Microscopy

Thermal Failure Analysis of Functional Failures by IR Lock-in Thermal Emission

2019 ◽  
Author(s):  
Paul Hubert P. Llamera ◽  
Camille Joyce G. Garcia-Awitan
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Near Infrared ◽  
Thermal Emission ◽  
Fault Localization ◽  
Fault Isolation ◽  
Distinct Advantage ◽  
Infra Red ◽  
Emission Microscopy ◽  
Lock In

Abstract Lock-in thermography (LIT), known as a powerful nondestructive fault localization technique, can also be used for microscopic failure analysis of integrated circuits (ICs). The dynamic characteristic of LIT in terms of measurement, imaging and sensitivity, is a distinct advantage compared to other thermal fault localization methods as well as other fault isolation techniques like emission microscopy. In this study, LIT is utilized for failure localization of units exhibiting functional failure. Results showed that LIT was able to point defects with emissions in the mid-wave infra-red (MWIR) range that Photo Emission Microscopy (PEM) with near infrared (NIR) to short- wave infra-red (SWIR) detection wavelength sensitivity cannot to detect.

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

Failure Analysis of Killer Defects and Yield Enhancement of Flat ROM Devices in Wafer Fabrication

2000 ◽  
Author(s):  
Y. N. Hua ◽  
Z. R. Guo ◽  
L. H. An ◽  
Shailesh Redkar
Keyword(s):  
Electron Microscope ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Wafer Fabrication ◽  
X Ray ◽  
Particle Contamination ◽  
Emission Microscopy ◽  
Microscopy Techniques ◽  
Scanning Electron

Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.

SRAM Failure Analysis Strategy

2003 ◽  
Author(s):  
P. Egger ◽  
C. Burmer
Keyword(s):  
Liquid Crystal ◽  
Failure Analysis ◽  
The Other ◽  
Other Hand ◽  
Analysis Strategy ◽  
Emission Microscopy ◽  
Metal Layers ◽  
Failure Localization

Abstract The area of embedded SRAMs in advanced logic ICs is increasing more and more. On the other hand smaller structure sizes and an increasing number of metal layers make conventional failure localization by using emission microscopy or liquid crystal inefficient. In this paper a SRAM failure analysis strategy will be presented independent on layout and technology.

Infra-Red Reflectance Microscopy (IRRM) for Daisy Chain Flip Chip Device Failure Analysis

2004 ◽  
Author(s):  
Carlo Grilletto ◽  
Steve Hsiung ◽  
Andrew Komrowski ◽  
John Soopikian ◽  
Daniel J.D. Sullivan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
State Of The Art ◽  
Failure Mechanisms ◽  
Simple Metal ◽  
X Ray ◽  
Infra Red ◽  
Cause Of Failure ◽  
Reflectance Microscopy ◽  
Ir Emission

Abstract This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.

Pseudo-Dynamic Fault Isolation Technique Using Backside Emission Microscopy – Case Study, Where All Other Methods Fail

2002 ◽  
Author(s):  
Yoav Weizman ◽  
Ezra Baruch ◽  
Michael Zimin
Keyword(s):  
Failure Analysis ◽  
Process Variations ◽  
Fault Isolation ◽  
Operating Conditions ◽  
Detection Sensitivity ◽  
Isolation Technique ◽  
Root Cause ◽  
Emission Microscopy ◽  
Failure Location ◽  
Noisy Background

Abstract Emission microscopy is usually implemented for static operating conditions of the DUT. Under dynamic operation it is nearly impossible to identify a failure out of the noisy background. In this paper we describe a simple technique that could be used in cases where the temporal location of the failure was identified however the physical location is not known or partially known. The technique was originally introduced to investigate IDDq failures (1) in order to investigate timing related issues with automated tester equipment. Ishii et al (2) improved the technique and coupled an emission microscope to the tester for functional failure analysis of DRAMs and logic LSIs. Using consecutive step-by-step tester halting coupled to a sensitive emission microscope, one is able detect the failure while it occurs. We will describe a failure analysis case in which marginal design and process variations combined to create contention at certain logic states. Since the failure occurred arbitrarily, the use of the traditional LVP, that requires a stable failure, misled the analysts. Furthermore, even if we used advanced tools as PICA, which was actually designed to locate such failures, we believe that there would have been little chance of observing the failure since the failure appeared only below 1.3V where the PICA tool has diminished photon detection sensitivity. For this case the step-by-step halting technique helped to isolate the failure location after a short round of measurements. With the use of logic simulations, the root cause of the failure was clear once the failing gate was known.

Combinational Logic Analysis Using Laser Voltage Probing

2015 ◽  
Author(s):  
Venkat Krishnan Ravikumar ◽  
Winson Lua ◽  
Seah Yi Xuan ◽  
Gopinath Ranganathan ◽  
Angeline Phoa
Keyword(s):  
Failure Analysis ◽  
Continuous Wave ◽  
Truth Table ◽  
Combinational Logic ◽  
Infra Red ◽  
Analysis Design ◽  
Logic State

Abstract Laser Voltage Probing (LVP) using continuous-wave near infra-red lasers are popular for failure analysis, design and test debug. LVP waveforms provide information on the logic state of the circuitry. This paper aims to explain the waveforms observed from combinational circuitries and use it to rebuild the truth table.

Stimulated and spontaneous far infra-red emission from uniaxially strained gapless Hg1−xCdxTe

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S.G. Gasan-Zade ◽  
M.V. Strikha ◽  
G.A. Shepelskii
Keyword(s):  
Electric Field ◽  
Impact Ionization ◽  
Strong Electric Field ◽  
Radiative Transition ◽  
Hot Electrons ◽  
Acceptor Level ◽  
Threshold Values ◽  
Red Emission ◽  
V Band ◽  
Infra Red

AbstractThe intensive far infra-red irradiation in the range of 80–100 μm was observed in uniaxially strained gapless p-Hg1−xCdxTe (MCT) with x = 0.14 in the strong electric field. The inverse occupation in strained MCT is created because the hot electrons distribution occurs in the c-band under impact ionization, while the holes are localized near the v-band top. The probability of band-to-band radiative transition increases dramatically when the acceptor level becomes resonance in the v-band. At threshold values of strain and electric field (P = 2.5–2.7 kbar, E = 50–55 V/cm), increase in irradiation (by 3 orders of magnitude) and increase in current (by 4–6 times) occur.

Yield and Failure Analysis of FinFET Source to Drain Leakage in 12nm Technology

2020 ◽  
Author(s):  
Felix Beaudoin ◽  
Satish Kodali ◽  
Rohan Deshpande ◽  
Wayne Zhao ◽  
Edmund Banghart ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Fault Localization ◽  
Detailed Characterization ◽  
Laser Stimulation ◽  
Emission Microscopy ◽  
Scan Chain ◽  
Multiple Samples ◽  
Tem Lamella ◽  
Diffusion Activation

Abstract Fault localization using both dynamic laser stimulation and emission microscopy was used to localize the failing transistors within the failing scan chain latch on multiple samples. Nanoprobing was then performed and the source to drain leakage in N-type FinFETs was identified. After extensive detailed characterization, it was concluded that the N-type dopant signal was likely due to projections from the source/drain regions included in the TEM lamella. Datamining identified the scan chain fail to be occurring uniquely for a specific family of tools used during source/drain implant diffusion activation. This paper discusses the processes involved in yield delta datamining of FinFET and its advantages over failure characterization, fault localization, nanoprobing, and physical failure analysis.

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