Phase-shifted modulation strategies for a single-stage isolated bi-directional power amplifier

Author(s):  
Shilin Guo ◽  
Jianhui Su ◽  
Lei Guo ◽  
Xuejian Chen
Keyword(s):  
2006 ◽  
Vol 83 (1) ◽  
pp. 20-23
Author(s):  
Almira Jean ◽  
Rusli ◽  
Zhongxiang Shen

Author(s):  
Mu-Chun Wang ◽  
Zhen-Ying Hsieh ◽  
Chieu-Ying Hsu ◽  
Shuang-Yuan Chen ◽  
Heng-Sheng Huang

In this paper, we present a single-stage class-E power amplifier with multiple-gated shape as well as 0.18μm complementary metal-oxide-semiconductor (CMOS) process for 2.4GHz Industry-Science-Medicine (ISM) band. This power amplifier is able to be easily integrated into the system-on-chip (SoC) circuit. For the competition of lower cost and high integration in marketing concern, CMOS technology is fundamentally better than GaAs technology. We adopt the Advanced Design System software in circuit simulation coming from Agilent Company through the Chip Implementation Center (CIC) channel plus TSMC 0.18 μm device models. The simulation results with temperature effect, show the good performance such as an output power achievement of +22dBm under a 1.8V supply voltage; the power-added efficiency (PAE) is over 30%; the output impedance (S22) and the input impedance (S11) are fully lower than −15dB; the power gain (S21) is +11dB; the inverse isolation (S12) is below −26dB. This amplifier reaches its 1-dB compression point at an output level of 16.5dBm related to the input power 6.5dBm position. The output power with temperature variation from 0°C to 125°C depicts an acceptable spec. range, too.


2012 ◽  
Vol 74 (1) ◽  
pp. 111-119 ◽  
Author(s):  
Mustafa Sayginer ◽  
Metin Yazgi ◽  
H. Hakan Kuntman ◽  
Bal S. Virdee

2009 ◽  
Vol 98 (2-3) ◽  
pp. 295-299 ◽  
Author(s):  
S. Riecke ◽  
S. Schwertfeger ◽  
K. Lauritsen ◽  
K. Paschke ◽  
R. Erdmann ◽  
...  

2016 ◽  
Vol 52 (21) ◽  
pp. 1797-1799 ◽  
Author(s):  
Shilin Guo ◽  
Jianhui Su ◽  
Xuejian Chen ◽  
Xiang Yu

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