Analysis and design of a high-frequency isolated dual-tank LCL resonant AC-DC converter

2014 ◽  
Author(s):  
Yimian Du ◽  
Ashoka K.S. Bhat
Keyword(s):  
High Frequency ◽  
Analysis And Design

Analysis and Design of 3.3 kV IGBT Based Three-Level DC/DC Converter with High-Frequency Isolation and Current Doubler Rectifier

2009 ◽  
Vol 25 (25) ◽  
pp. 103-108
Author(s):  
Dmitri Vinnikov ◽  
Tanel Jalakas ◽  
Indrek Roasto
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Power Converter ◽  
Rolling Stock ◽  
Analysis And Design ◽  
Auxiliary Power ◽  
Igbt Modules ◽  
Isolation Transformer ◽  
New Generation ◽  
Generation Power

Analysis and Design of 3.3 kV IGBT Based Three-Level DC/DC Converter with High-Frequency Isolation and Current Doubler RectifierThe paper presents the findings of a R&D project connected to the development of auxiliary power supply (APS) for the high-voltage DC-fed rolling stock applications. The aim was to design a new-generation power converter utilizing high-voltage IGBT modules, which can outpace the predecessors in terms of power density, i.e. to provide more power for smaller volumetric space. The topology proposed is 3.3 kV IGBT-based three-level neutral point clamped (NPC) half-bridge with high-frequency isolation transformer and current doubler rectifier that fulfils all the targets imposed by the designers. Despite an increased component count the proposed converter is very simple in design and operation. The paper provides an overview of the design with several recommendations and guidelines. Moreover, the simulation and experimental results are discussed and the performance evaluation of the proposed converter is presented.

scholarly journals Analysis and Design of a Multi-Port DC-DC Converter for Interfacing PV Systems

Energies ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1943
Author(s):  
Bader N. Alajmi ◽  
Mostafa I. Marei ◽  
Ibrahim Abdelsalam ◽  
Mohamed F. AlHajri
Keyword(s):  
High Frequency ◽  
Computer Aided Design ◽  
Electromagnetic Transients ◽  
Pv System ◽  
Analysis And Design ◽  
Pv Systems ◽  
Point Tracking ◽  
Power Point Tracking ◽  
Power Point ◽  
Aided Design

A high-frequency multi-port (HFMP) direct current (DC) to DC converter is presented. The proposed HFMP is utilized to interface a photovoltaic (PV) system. The presented HFMP is compact and can perform maximum power point tracking. It consists of a high-frequency transformer with many identical input windings and one output winding. Each input winding is connected to a PV module through an H-bridge inverter, and the maximum PV power is tracked using the perturb and observe (P&O) technique. The output winding is connected to a DC bus through a rectifier. The detailed analysis and operation of the proposed HFMP DC-DC converter are presented. Extensive numerical simulations are conducted, using power system computer aided design (PSCAD)/electromagnetic transients including DC (EMTDC) software, to evaluate the operation and dynamic behavior of the proposed PV interfacing scheme. In addition, an experimental setup is built to verify the performance of the HFMP DC-DC converter.

Analysis and Design of IGBT Driving and Protection Circuit for Photovoltaic Grid-Connected Inverter

2011 ◽  
Vol 130-134 ◽  
pp. 4118-4121
Author(s):  
Shu Qiu Gong ◽  
Ming Tang ◽  
Li Yan Cui
Keyword(s):  
Threshold Voltage ◽  
High Frequency ◽  
Film Structure ◽  
Voltage Regulator ◽  
Practical Application ◽  
Calculation Methods ◽  
Analysis And Design ◽  
Insulated Gate Bipolar Transistor ◽  
Protection Circuit ◽  
Grid Connected Inverter

For the characteristics of high frequency of switching devices in the photovoltaic inverter and complexity of circuit topology, the insulated gate bipolar transistor driving protection circuit is designed which is suitable for photovoltaic inverter. The circuit which is based on thick film structure of M57962L has isolated power supply and threshold voltage regulator circuits. The control and regulation can be achieved precisely for the threshold voltage of over current protection. The internal structure of M57962L has been analyzed here. The process of slow turn off action is observed practically. For the circuit periphery parameters of M57962L, the general calculation methods are given according to various models and the level of protection for IGBT. The practical application shows that the method is correct and effective.

Quad Band Planar Inverted F Antenna for Smart Phone

2014 ◽  
Vol 573 ◽  
pp. 394-399
Author(s):  
R. Manikandan ◽  
P.K. Jawahar
Keyword(s):  
High Frequency ◽  
Smart Phone ◽  
Analysis And Design ◽  
High Frequency Structure Simulator ◽  
Low Profile ◽  
Resonance Frequencies ◽  
Theoretical Predictions ◽  
Communication Devices ◽  
Device Miniaturization ◽  
Good Agreement

In recent years, the demand for compact handheld communication devices has grown significantly. For device miniaturization antenna size is to be reduced. Micro strip and PIFA have been used for past few years. Since it has low profile geometry it can be embedded into devices. This project is to develop a Quad band small size Planar Inverted F Antenna (PIFA) for the operation in modern multi-band mobile transceiver system. Various techniques for analysis and design of such antenna investigated in this project. The design curve is used to design Quad band Planar inverted F Antenna to operate at the 900, 1800, 2100 and 3500 MHz bands. Since High Frequency Structure Simulator (HFSS) simulation result agrees well with the theoretical predictions, this project also designed through HFSS. An antenna designed at the four desired band and optimized to adjust the four resonance frequencies using HFSS simulation. The substrate FR4 (εr=4.4 & tanδ = 0.02) are in good agreement with the simulation result. Further bandwidth enhancements by making defects in the substrate at particular area were need of much reflection.

scholarly journals Analysis and Design of Helmholtz Protector to Improve High-Frequency Response of Insert Earphone

2019 ◽  
Vol 9 (12) ◽  
pp. 2541 ◽  
Author(s):  
Yuan-Wu Jiang ◽  
Dan-Ping Xu ◽  
Zhi-Xiong Jiang ◽  
Jun-Hyung Kim ◽  
Sang-Moon Hwang
Keyword(s):  
Frequency Response ◽  
High Frequency ◽  
Experimental Result ◽  
Parameter Method ◽  
Analysis Tool ◽  
Analysis Method ◽  
Analysis And Design ◽  
High Frequency Response ◽  
Lumped Parameter ◽  
Lumped Parameter Method

With the development of multimedia devices, earphones are playing an increasingly important role. This article applies the lumped parameter method using an equivalent circuit to model the electromagnetic, mechanical, and acoustic domains of earphones. Then, parameters are determined according to the dimensions and material properties of earphone parts. On the basis of the analysis tool and determined parameters, a Helmholtz protector is analyzed and designed to improve the high-frequency response. Samples are fabricated, and the experiment verifies the analysis method. The experimental result shows that the peaks at 7 k and 10 k are decreased at 8.05 dB and 7.89 dB. The root means square value of SPL deviation compared with target curve decreased from 9.77 to 4.39. High-frequency response is improved by using the Helmholtz protector.

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