Room temperature operation of InAs quantum dot lasers formed by diblock-copolymer lithography and selective area MOCVD growth

Author(s):  
Honghyuk Kim ◽  
Wei Wei ◽  
Thomas F Kuech ◽  
Padma Gopalan ◽  
Luke J Mawst
1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 605-607 ◽  
Author(s):  
Tzer-En Nee ◽  
Nien-Tze Yeh ◽  
Po-Wen Shiao ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee

2007 ◽  
Vol 7 (12) ◽  
pp. 4443-4446 ◽  
Author(s):  
Jin Soo Kim ◽  
Cheul-Ro Lee ◽  
Kyeong Won Seol ◽  
Dae Kon Oh

For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 °C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 °C and then, decreased with (−)0.419 nm/K above 50 °C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.


2004 ◽  
Vol 85 (17) ◽  
pp. 3675-3677 ◽  
Author(s):  
J. W. Jang ◽  
S. H. Pyun ◽  
S. H. Lee ◽  
I. C. Lee ◽  
Weon G. Jeong ◽  
...  

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