High performance Ge/Si avalanche photodiode

2015 ◽  
Author(s):  
Mengyuan Huang ◽  
Pengfei Cai ◽  
Liangbo Wang ◽  
Su Li ◽  
Wang Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Avalanche Photodiode

scholarly journals High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer

2020 ◽  
Vol 8 (5) ◽  
pp. 755
Author(s):  
Jianliang Huang ◽  
Chengcheng Zhao ◽  
Biying Nie ◽  
Shiyu Xie ◽  
Dominic C. M. Kwan ◽  
...  
Keyword(s):  
High Performance ◽  
Avalanche Photodiode

GaN/AlGaN avalanche photodiode detectors for high performance ultraviolet sensing applications

2019 ◽  
Author(s):  
Ashok K. Sood ◽  
John W. Zeller ◽  
Parminder Ghuman ◽  
Sachidananda Babu ◽  
Russell D. Dupuis
Keyword(s):  
High Performance ◽  
Avalanche Photodiode ◽  
Sensing Applications

High-performance SiC avalanche photodiode for single ultraviolet photon detection

2008 ◽  
Author(s):  
Xiaogang Bai ◽  
Han-din Liu ◽  
Dion McIntosh ◽  
Joe C. Campbell
Keyword(s):  
High Performance ◽  
Avalanche Photodiode ◽  
Photon Detection

scholarly journals Effect of Multiplication and Absorption Layers Width on Avalanche Multiplication Gain in InGaAs/InP Avalanche Photodiode

2018 ◽  
Vol 7 (4.35) ◽  
pp. 559
Author(s):  
Mahdi All Khamis ◽  
W. Emilin Rashid ◽  
Pin Jern Ker ◽  
K. Y. Lau
Keyword(s):  
High Performance ◽  
Collection Efficiency ◽  
Avalanche Photodiode ◽  
Long Distance ◽  
Avalanche Multiplication ◽  
Layer Width ◽  
Simulation Tools ◽  
Multiplication Gain ◽  
High Bit Rate ◽  
Primary Current

The separate absorption, grading, charge, and multiplication (SAGCM) InGaAs/InP avalanche photodiodes (ADPs) are widely used in long distance, high bit rate optical communication system due to their high performance and response to optical fiber wavelength spectrum. In this work, the effect of multiplication layer width (MLW) and absorption layer width (ALW) on APD performance is studied and investigated. Silvaco TCAD software is used as simulation tools to simulate a precise model of InGaAs/InP APD and analyze its, performance under an illuminated condition. As such, three different ALW with various MLW has been simulated while the structure values and material parameters are kept constant. It was found that in the APD with smaller MLW, the distance between the punch-through voltage and the breakdown voltage can be maximized. Therefore, the operation region of APD will be extended. In addition, the multiplication gain is obtained from the photocurrent and primary current by taking the APD collection efficiency effect under the consideration.

High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions

1983 ◽  
Vol 19 (20) ◽  
pp. 818 ◽  
Author(s):  
J.C. Campbell ◽  
A.G. Dentai ◽  
W.S. Holden ◽  
B.L. Kasper
Keyword(s):  
High Performance ◽  
Avalanche Photodiode

High-performance InGaAs/InP avalanche photodiode for a 2.5 Gb s-1 optical receiver

1995 ◽  
Vol 27 (5) ◽  
pp. 553-559 ◽  
Author(s):  
C. Y. Park ◽  
K. S. Hyun ◽  
S. K. Kang ◽  
M. K. Song ◽  
T. Y. Yoon ◽  
...  
Keyword(s):  
High Performance ◽  
Avalanche Photodiode ◽  
Optical Receiver
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