Growing Interest of Advanced Commercial CMOS Technologies for Space and Medical Applications. Illustration with a New Nano-Power and Radiation-Hardened SRAM in 130nm CMOS

Author(s):  
Philippe Roche ◽  
Mark Lysinger ◽  
Gilles Gasiot ◽  
Jean-Marc Daveau ◽  
Mehdi Zamanian ◽  
...  
Author(s):  
C. O. Jung ◽  
S. J. Krause ◽  
S.R. Wilson

Silicon-on-insulator (SOI) structures have excellent potential for future use in radiation hardened and high speed integrated circuits. For device fabrication in SOI material a high quality superficial Si layer above a buried oxide layer is required. Recently, Celler et al. reported that post-implantation annealing of oxygen implanted SOI at very high temperatures would eliminate virtually all defects and precipiates in the superficial Si layer. In this work we are reporting on the effect of three different post implantation annealing cycles on the structure of oxygen implanted SOI samples which were implanted under the same conditions.


1976 ◽  
Vol 15 (02) ◽  
pp. 69-74
Author(s):  
M. Goldberg ◽  
B. Doyon

This paper describes a general data base management package, devoted to medical applications. SARI is a user-oriented system, able to take into account applications very different by their nature, structure, size, operating procedures and general objectives, without any specific programming. It can be used in conversational mode by users with no previous knowledge of computers, such as physicians or medical clerks.As medical data are often personal data, the privacy problem is emphasized and a satisfactory solution implemented in SARI.The basic principles of the data base and program organization are described ; specific efforts have been made in order to increase compactness and to make maintenance easy.Several medical applications are now operational with SARI. The next steps will mainly consist in the implementation of highly sophisticated functions.


2019 ◽  
Vol 2019 (4) ◽  
pp. 353-1-353-9
Author(s):  
Sven Jörissen ◽  
Michael Bleier ◽  
Andreas Nüchter
Keyword(s):  

2016 ◽  
Vol 18 (1) ◽  
pp. 76-86
Author(s):  
N.N. Prokopenko ◽  
N.V. Butyrlagin ◽  
A.V. Bugakova ◽  
A.A. Ignashin

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